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MJE13002のメーカーはUnisonic Technologiesです、この部品の機能は「NPN SILICON POWER TRANSISTOR」です。 |
部品番号 | MJE13002 |
| |
部品説明 | NPN SILICON POWER TRANSISTOR | ||
メーカ | Unisonic Technologies | ||
ロゴ | |||
このページの下部にプレビューとMJE13002ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
UNISONIC TECHNOLOGIES CO., LTD
MJE13002
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE
FAST-SWITCHING NPN
POWER TRANSISTOR
DESCRIPTION
The UTC MJE13002 designed for use in high–volatge, high
speed,power switching in inductive circuit, It is particularly
suited for 115 and 220V switchmode applications such as
switching regulator’s,inverters, DC-DC converter, Motor
control, Solenoid/Relay drivers and deflection circuits.
FEATURES
*Collector-Emitter Sustaining Voltage:
VCEO (sus)=300V.
*Collector-Emitter Saturation Voltage:
VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A
*Switch Time- tf =0.7μs(Max.) @IC=1.0A.
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13002L-x-T92-B
MJE13002G-x-T92-B
MJE13002L-x-T92-K
MJE13002G-x-T92-K
MJE13002L-x-T92-A-B MJE13002G-x-T92-A-B
MJE13002L-x-T92-A-K MJE13002G-x-T92-A-K
MJE13002L-x-T60-T
MJE13002G-x-T60-T
Package
TO-92
TO-92
TO-92
TO-92
TO-126
Pin Assignment
123
BCE
BCE
ECB
ECB
BCE
Packing
Tape Box
Bulk
Tape Box
Bulk
Tube
MARKING
TO-92
TO-126/TO-126C/TO-126S
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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1 Page MJE13002
NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage
SYMBOL
VCEO(SUS)
Collector Cutoff Current
ICEV
SECOND BREAKDOWN
Second Breakdown Collector Current with
bass forward biased (See Figure 5)
Clamped Inductive SOA with base reverse
biased (See Figure 6)
DC Current Gain
IS/IB
RBSOA
hFE1
hFE2
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
V BE(SAT)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
fT
Cob
SWITCHING CHARACTERISTICS (TABLE 1)
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
ts
tf
INDUCTIVE LOAD, CLAMPED (TABLE 1, FIGURE 7)
Storage Time
tsv
Crossover Time
tc
Fall Time
tfi
TEST CONDITIONS
IC=10 mA , IB=0
VCEV=Rated Value, VBE(off)=1.5 V
VCEV=Rated Value,
VBE(off)=1.5V,Tc=100°C
IC=0.5 A, VCE=2 V
IC=1 A, VCE=2 V
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
IC=1A, IB=0.25A,TC=100°C
IC=0.5A, IB=0.1A
IC=1A, IB=0.25 A
IC=1A, IB=0.25A,TC=100°C
IC=100mA, VCE=10 V, f=1MHz
VCB=10V, IE=0, f=0.1MHz
VCC=125V, IC=1A,
IB1=IB2=0.2A, tP=25μs,
Duty Cycle≤1%
IC=1A,Vclamp=300V,
IB1=0.2A,VBE(off)=5V,TC=100°C
MIN TYP MAX UNIT
300
1
5
8 40
5 25
0.5
1
3
V
1
1
1.2 V
1.1
4 10
21
MHz
pF
0.05 0.1
0.5 1
24
0.4 0.7
μs
μs
μs
μs
1.7 4
0.29 0.75
0.15
μs
μs
μs
CLASSIFICATION OF hFE1
RANK
RANGE
A
8 ~ 16
B
15 ~ 21
C
20 ~ 26
D
25 ~ 31
E
30 ~ 36
F
35 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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NPN EPITAXIAL SILICON TRANSISTOR
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and second
break-down. Safe operating area curves indicate Ic – VCE limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on Tc=25°C; TJ(pk) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when Tc≧25°C. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at the voltages shown on Figure 5 may be found at any case
tem-perature by using the appropriate curve on Figure 7.
TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases,
with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe
Operating Area and represents the voltage–current conditions during re-verse biased turn–off. This rating is verified
under clamped conditions so that the device is never subjected to an ava-lanche mode. Figure 6 gives RBSOA
characteristics.
VCE,COLLECTOR-EMITTERVOLTAGE (VOLTS)
10
5 10µS
2 100µS
1 5.0ms
0.5 dc 1.0ms
0.2 Tc=25?
0.1 THERMAL LIMIT (SINGLE PULSE)
0.05
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
0.02
0.01
5
10 20
50 100 200 300 500
Fig 5. Active Region Safe Operating Area
IC, CASE TEMPERATURE (? )
1 SECOND BREAKDOWN
DERATING
0.8
0.
6
THERMAL
0.4 DERATING
0.2
0
20 40 60 80 100 120 140 160
Fig 7. Forward Bias Power Derating
VCEV,COLLECTOR-EMITTER LAMP VOLTAGE(VOLTS)
1.6
1.2
Tj? 100?
0.8 IB1=1A
VBE(off)=9V
0.4 5V
3V
0
0
100
1.5V
200
30
0
400
500 600 700
800
Fig 6. Reverse Bias Safe Operating Area
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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