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PDF HLB124 Data sheet ( Hoja de datos )

Número de pieza HLB124
Descripción NPN EPITAXIAL PLANAR TRANSISTOR
Fabricantes Unisonic Technologies 
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No Preview Available ! HLB124 Hoja de datos, Descripción, Manual

UTCHLB124 NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL PLANAR TRANSISTOR
DESCRIPTION
The UTC HLB124 is designed for high voltage, high
speed switching inductive circuits, and amplifier
applications.
FEATURES
* High Speed Switching
* Low Saturation Voltage
* High Reliability
1
TO-220
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number: HLB124L
ABSOLUTE MAXIMUM RATINGS
(Ta=25)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (PULSE)
Base Current (DC)
Base Current (PULSE)
Total Power Dissipation (Tc=25)
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
Icwww.DataSheet4U.com
ICP
IB
IBP
Pc
TJ
TSTG
RATINGS
600
400
8
2
4
1
2
35
150
-40 ~ +150
ELECTRICAL CHARACTERISTICS
(Ta=25, unless otherwise specified.)
PARAMETER
SYMBOL
Collector-Base Breakdown Voltage
BVCBO
Collector-Emitter Breakdown Voltage
BVCEO
Emitter-Base Breakdown Voltage
BVEBO
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
C-E Saturation Voltage
*VCE (sat) 1
*VCE (sat) 2
B-E Saturation Voltage
*VBE (sat) 1
*VBE (sat) 2
*hFE1
DC Current Gain
*hFE2
*hFE3
Gain-Bandwidth Product
fT
*Pulse Test : Pulse Width 380µs, Duty Cycle 2%
CLASSIFICATION OF HFE1
TEST CONDITIONS
IC = 1mA
IC = 10mA
IE = 1mA
VCB = 600V
VEB = 9V, IC = 0
IC = 0.1A, IB = 10mA
IC = 0.3A, IB = 30mA
IC = 0.1A, IB = 10mA
IC = 0.3A, IB = 30mA
VCE = 5V, IC = 0.3A
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 1A
VCE = 10V, IC = 0.3A, f=1MHz
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
UNIT
V
V
V
A
A
A
A
W
MIN TYP MAX UNIT
600 V
400 V
8V
10 µA
10 µA
0.3 V
0.8 V
0.9 V
1.2 V
10 40
10
6
15 MHz
1
QW-R203-029,A

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