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PDF HLB122 Data sheet ( Hoja de datos )
| Número de pieza | HLB122 | |
| Descripción | NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UTC HLB122
NPN EPITAXIAL SILICON TRANSISTOR
NPN TRIPLE DIFFUSED PLANAR TYPE
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC HLB122 is a medium power transistor
designed for use in switching applications.
FEATURES
* High breakdown voltage
* Low collector saturation voltage
* Fast switching speed
1
TO-251
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number:HLB122L
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Total Power Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEOwww.DataSheet4U.com
VEBO
IC
ICF
IB
IBP
PC
TJ
TSTG
RATINGS
600
400
6
800
1600
100
200
20
150
-40 ~ +150
UNIT
V
V
V
mA
mA
mA
mA
W
℃
℃
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO IC = 100µA
Collector-Emitter Breakdown Voltage BVCEO IC = 10mA
Emitter-Base Breakdown Voltage
BVEBO IE = 10µA
Collector Cutoff Current
ICBO
VCB = 600V
Collector Cutoff Current
ICEO
VCB = 400V
Emitter Cutoff Current
IEBO
VEB = 6V
C-E Saturation Voltage
*VCE (sat) 1 IC = 100mA, IB = 20mA
*VCE (sat) 2 IC = 300mA, IB = 60mA
B-E Saturation Voltage
*VBE (sat) IC = 100mA, IB = 20mA
DC Current Gain
*hFE1
*hFE2
VCE = 10V, IC = 0.1A
VCE = 10V, IC = 0.5A
Fall Time
Tf VCC = 100V, IC= 0.3A, IB1= -IB2= 0.06A
*Pulse Test : Pulse Width ≤ 380µs, Duty Cycle ≤ 2%
600
400
6
10
10
V
V
V
10 µA
10 µA
10 µA
400 mV
800 mV
1V
40
0.6 µS
UTC UNISONIC TECHNOLOGIES CO., LTD.
1
www.unisonic.com.tw
QW-R213-014,A
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet HLB122.PDF ] | |
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