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PDF 4N60 Data sheet ( Hoja de datos )

Número de pieza 4N60
Descripción N-CHANNEL POWER MOSFET
Fabricantes Unisonic Technologies 
Logotipo Unisonic Technologies Logotipo



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No Preview Available ! 4N60 Hoja de datos, Descripción, Manual

UNISONIC TECHNOLOGIES CO., LTD
4N60
4 Amps, 600 Volts
N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 4N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 2.5@VGS = 10 V
* Ultra low gate charge ( typical 15 nC )
* Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
www.DataSheet4U.com
1
TO-220
1
TO-220F
*Pb-free plating product number: 4N60L
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
4N60-TA3-T
4N60L-TA3-T
4N60-TF3-T
4N60L-TF3-T
Package
TO-220
TO-220F
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
4N60L-TA 3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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4N60 pdf
4N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
VGS
RG
10V
Pulse Width 1 s
Duty Factor 0.1%
RL
VDD
D.U.T.
VDS 90%
10%
VGS
tD(ON )
tR
Power MOSFET
tD (OFF)
tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
50k as D.U.T.
12V
0.2 F
0.3 F
10V
QG
VGS
VDS
QGS
QGD
3mA
DUT
VG
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
VDS
L
BVDSS
10V
RD
tp
D.U.T.
VDD
IAS
tp Time
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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