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PDF 1N60 Data sheet ( Hoja de datos )
| Número de pieza | 1N60 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | Unisonic Technologies | |
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 1. - 50V, Germanium Glass Diode  Hay una vista previa y un enlace de descarga de 1N60 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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UNISONIC TECHNOLOGIES CO., LTD
1N60
1.2 Amps, 600 Volts
N-CHANNEL MOSFET
1
Power MOSFET
TO- 251
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) =9.3Ω@VGS = 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
www.DataSheet4U.com
1
TO - 252
1 TO-220
1 TO-220F
*Pb-free plating product number: 1N60L
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
Package
1N60-TA3-T
1N60L-TA3-T
TO-220
1N60-TF3-T
1N60L-TF3-T
TO-220F
1N60-TM3-T
1N60L-TM3-T
TO-251
1N60-TN3-R
1N60L-TN3-R
TO-252
1N60-TN3-T
1N60L-TN3-T
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tape Reel
Tube
1N60L-TA 3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
TN 3: TO-252
(3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-052,D
1 page  
1N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
VGS
RG
10V
Pulse Width ≤ 1 s
Duty Factor ≤0.1%
RL
VDD
D.U.T.
VDS 90%
10%
VGS
tD(ON )
tR
Power MOSFET
tD (OFF)
tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
50k as D.U.T.
12V
0.2 F
0.3 F
10V
QG
VGS
VDS
QGS
QGD
3mA
DUT
VG
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
VDS
L
BVDSS
10V
RD
tp
D.U.T.
VDD
IAS
tp Time
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R502-052,D
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 1N60.PDF ] | |
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