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IRHE9230 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHE9230
部品説明 (IRHE9230 / IRHE93230) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRHE9230 Datasheet, IRHE9230 PDF,ピン配置, 機能
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
PD - 91804D
IRHE9230
200V, P-CHANNEL
REF: MIL-PRF-19500/630
RAD-HardHEXFET®
MOSFETTECHNOLOGY
Product Summary
Part Number Radiation Level
IRHE9230 100K Rads (Si)
IRHE93230 300K Rads (Si)
RDS(on)
0.80
0.80
ID QPL Part Number
-4.0A JANSR2N7390U
-4.0A JANSF2N7390U
International Rectifier’s RAD-HardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devicwewws.DraetaStaheient4U.com
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
LCC - 18
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Pre-Irradiation
Units
-4.0
-2.4 A
-16
25 W
0.2 W/°C
±20 V
171 mJ
-4.0 A
2.5 mJ
-27
-55 to 150
V/ns
oC
300 ( for 5s)
0.42 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
3/1/00

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(IRHE9230 / IRHE93230) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

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