(PDF) RB520S-30 Datasheet - Schottky barrier diode

Número de pieza	RB520S-30
Descripción	Schottky barrier diode
Fabricantes	ROHM Semiconductor
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No Preview Available ! Diodes Schottky barrier diode RB520S-30 RB520S-30 zApplications Low current rectification z External dimensions (Unit : mm) 0.8±0.05 0.12±0.05 zFeatures 1) Ultra Small mold type. (EMD2) 2) Low IR. 3) High reliability. zConstruction Silicon epitaxial planar 0.3±0.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) 0.6±0.1 z Taping specifications (Unit : mm) www.DataSheet4U.com 4.0±0.1 2.0±0.05 φ1.5±0.05 z Land size figure (Unit : mm) 0.8 EMD2 zStructure 0.2±0.05 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature 0.95±0.06 0 Symbol VR Io IFSM Tj Tstg E空mポpケtyットpocket 4.0±0.1 2.0±0.05 φ0.5 Limits 30 200 1 150 -40 to +125 Unit V mA A ℃ ℃ 0.2 0.76±0.05 zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol Min. Typ. Max. VF - - 0.6 IR - - 1 Unit Conditions V IF=200mA µA VR=10V Rev.B 1/3 1 page

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PDF RB520S-30 Data sheet ( Hoja de datos )