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MV2109 の電気的特性と機能

MV2109のメーカーはON Semiconductorです、この部品の機能は「(MV2101 - MV2209) Silicon Tuning Diodes」です。


製品の詳細 ( Datasheet PDF )

部品番号 MV2109
部品説明 (MV2101 - MV2209) Silicon Tuning Diodes
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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MV2109 Datasheet, MV2109 PDF,ピン配置, 機能
www.DataSheet4U.com
MMBV2101LT1 Series,
MV2105, MV2101, MV2109,
LV2209
Preferred Device
Silicon Tuning Diodes
These devices are designed in popular plastic packages for the high
volume requirements of FM Radio and TV tuning and AFC, general
frequency control and tuning applications. They provide solid−state
reliability in replacement of mechanical tuning methods. Also
available in a Surface Mount Package up to 33 pF.
Features
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance − 10%
Complete Typical Design Curves
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Reverse Voltage
Forward Current
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
MMBV21xx
VR
IF
PD
Value
30
200
225
1.8
Unit
Vdc
mAdc
mW
mW/°C
@ TA = 25°C
Derate above 25°C
MV21xx
LV2209
280 mW
2.8 mW/°C
Junction Temperature
TJ +150 °C
Storage Temperature Range
Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
V(BR)R
Vdc
(IR = 10 mAdc)
MMBV21xx, MV21xx
30 − −
LV2209
25 − −
Reverse Voltage Leakage Current IR − − 0.1 mAdc
(VR = 25 Vdc, TA = 25°C)
Diode Capacitance Temperature Co- TCC
efficient (VR = 4.0 Vdc, f = 1.0 MHz)
− 280 − ppm/°C
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
1
http://onsemi.com
6.8−100 pF, 30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
31
Cathode
Anode
SOT−23
21
Cathode
Anode
TO−92
MARKING
3 DIAGRAMS
1
2
SOT−23 (TO−236)
CASE 318−08
xxx M G
G
STYLE 8
1
xxx = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
TO−92 (TO−226AC)
1
2
CASE 182
STYLE 1
yy
yyyy
AYWW G
G
yyyyyy = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MMBV2101LT1/D

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MV2109 pdf, ピン配列
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
TYPICAL DEVICE CHARACTERISTICS
1000
500
200
100 MMBV2109LT1/MV2109
50 MMBV2105LT1/MV2105
20 MMBV2101LT1/MV2101
10
5.0
TA = 25°C
f = 1.0 MHz
2.0
1.0
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
10
20 30
1.040
1.030
VR = 2.0 Vdc
1.020
1.010
VR = 4.0 Vdc
1.000
0.990
0.980
0.970
VR = 30 Vdc
NORMALIZED TO CT
at TA = 25°C
VR = (CURVE)
0.960
−75 −50 −25 0 +25 +50 +75 +100 +125
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
100
50 TA = 125°C
20
10
5.0
2.0 TA = 75°C
1.0
0.50
0.20 TA = 25°C
0.10
0.05
0.02
0.01 0 5.0 10 15 20 25 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Current versus Reverse Bias
Voltage
5000
3000 MMBV2101LT1/MV2101
2000
MMBV2109LT1
1000
500
300
200
100
50
30
20
TA = 25°C
f = 50 MHz
10
1.0
2.0 3.0
5.0 7.0 10
20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Figure of Merit versus Reverse Voltage
5000
3000
2000
1000 MMBV2101LT1/MV2101
500
300
200
100
50
30
20
TA = 25°C
VR = 4.0 Vdc
10
10 20
MMBV2109LT1/MV2109
30 50 70 100
f, FREQUENCY (MHz)
200 250
Figure 5. Figure of Merit versus Frequency
http://onsemi.com
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共有リンク

Link :


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