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PDF MJD31 Data sheet ( Hoja de datos )
| Número de pieza | MJD31 | |
| Descripción | (MJD31 / MJD32) Complementary Power Transistors | |
| Fabricantes | ON Semiconductor | |
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MJD31 (NPN), MJD32 (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
• Straight Lead Version in Plastic Sleeves (“1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
• Electrically Similar to Popular TIP31 and TIP32 Series
• Epoxy Meets UL 94, V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
www.onsemi.com
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
COMPLEMENTARY
COLLECTOR
2,4
COLLECTOR
2,4
MAXIMUM RATINGS
Rating
Symbol Max Unit
1
BASE
1
BASE
Collector−Emitter Voltage
MJD31, MJD32
MJD31C, MJD32C
VCEO
Vdc
40
100
3
EMITTER
3
EMITTER
Collector−Base Voltage
MJD31, MJD32
MJD31C, MJD32C
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
VCB Vdc
40
100
VEB 5.0 Vdc
IC 3.0 Adc
ICM 5.0 Adc
IB 1.0 Adc
PD W
15 W/°C
0.12
PD W
1.56 W/°C
0.012
4
12
3
DPAK
CASE 369C
STYLE 1
4
1
2
3
IPAK
CASE 369D
STYLE 1
MARKING DIAGRAMS
Operating and Storage Junction Temperature
Range
ESD − Human Body Model
TJ, Tstg
HBM
−65 to
+ 150
3B
°C
V
AYWW
J3xxG
YWW
J3xxG
ESD − Machine Model
MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
DPAK
A
Y
WW
xx
G
IPAK
= Site Code
= Year
= Work Week
= 1, 1C, 2, or 2C
= Pb−Free Package
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient*
Lead Temperature for Soldering Purposes
RqJC
RqJA
TL
8.3 °C/W
80 °C/W
260 °C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
© Semiconductor Components Industries, LLC, 2016
September, 2016 − Rev. 16
1
Publication Order Number:
MJD31/D
1 page  
1000
100
10
1
0.1
MJD31 (NPN), MJD32 (PNP)
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
TA = 25°C
100
Cib
Cob 10
VCE = 5 V
TA = 25°C
1 10
VR, REVERSE VOLTAGE (V)
Figure 12. Capacitance
10
1
100 0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 13. Current−Gain−Bandwidth Product
1
0.1
0.01
1
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Safe Operating Area
100
www.onsemi.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MJD31.PDF ] | |
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