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STP12IE95F4 の電気的特性と機能

STP12IE95F4のメーカーはST Microelectronicsです、この部品の機能は「Emitter Switched Bipolar Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP12IE95F4
部品説明 Emitter Switched Bipolar Transistor
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STP12IE95F4 Datasheet, STP12IE95F4 PDF,ピン配置, 機能
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STP12IE95F4
Emitter Switched Bipolar Transistor
ESBT® 950 V - 12 A - 0.083
Preliminary Data
General features
VCS(ON)
1V
IC
12A
RCS(ON)
0.083 W
High voltage / high current Cascode
configuration
Low equivalent on resistance
Very fast-switch up to 150 kHz
Squared RBSOA up to 950V
Very low Ciss driven by RG = 47
Very low turn-off cross over time
Applications
Flyback SMPS for adapter
Flyback / forward SMPS for desktop
Description
The STP12IE95F4 is manufactured in Monolithic
ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage applica-
tions.
It is designed for use in Gate Driven based topolo-
gies.
TO220FP-4L
Internal schematic diagrams
00000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000 0000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000
Order codes
Part Number
Marking
STP12IE95F4
P12IE95F4
Package
TO220FP-4L
Packing
Tube
January 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/11
www.st.com
11

1 Page





STP12IE95F4 pdf, ピン配列
STP12IE95F4
1 Electrical ratings
Table 1.
Symbol
Absolute maximum rating
Parameter
VCS(SS) Collector-source voltage (VBS = VGS = 0 V)
VBS(OS) Base-source voltage (IC = 0, VGS = 0 V)
VSB(OS) Source-base voltage (IC = 0, VGS = 0 V)
VGS Gate-source voltage
IC Collector current
ICM Collector peak current (tP < 5ms)
IB Base current
IBM Base peak current (tP < 5ms)
Ptot Total dissipation at Tc = 25°C
Tstg Storage temperature
TJ Max. operating junction temperature
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
__max
Electrical ratings
Value
950
30
17
± 17
12
36
5
10
21
-40 to 150
150
Unit
V
V
V
V
A
A
A
A
W
°C
°C
Value
6
Unit
°C/W
3/11


3Pages


STP12IE95F4 電子部品, 半導体
Electrical characteristics
Figure 5. Reverse biased SOA
STP12IE95F4
Figure 6. Dynamic collector-emitter
voltage
Figure 7. Inductive load switching time Figure 8. Inductive load switching time
2.2 Test circuits
Figure 9. Static VCS(ON) test circuits
6/11

6 Page



ページ 合計 : 11 ページ
 
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共有リンク

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部品番号部品説明メーカ
STP12IE95F4

Emitter Switched Bipolar Transistor

ST Microelectronics
ST Microelectronics


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