|
|
STP12IE95F4のメーカーはST Microelectronicsです、この部品の機能は「Emitter Switched Bipolar Transistor」です。 |
部品番号 | STP12IE95F4 |
| |
部品説明 | Emitter Switched Bipolar Transistor | ||
メーカ | ST Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTP12IE95F4ダウンロード(pdfファイル)リンクがあります。 Total 11 pages
www.DataSheet4U.com
STP12IE95F4
Emitter Switched Bipolar Transistor
ESBT® 950 V - 12 A - 0.083 Ω
Preliminary Data
General features
VCS(ON)
1V
IC
12A
RCS(ON)
0.083 W
■ High voltage / high current Cascode
configuration
■ Low equivalent on resistance
■ Very fast-switch up to 150 kHz
■ Squared RBSOA up to 950V
■ Very low Ciss driven by RG = 47Ω
■ Very low turn-off cross over time
Applications
■ Flyback SMPS for adapter
■ Flyback / forward SMPS for desktop
Description
The STP12IE95F4 is manufactured in Monolithic
ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage applica-
tions.
It is designed for use in Gate Driven based topolo-
gies.
TO220FP-4L
Internal schematic diagrams
00000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000 0000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000
Order codes
Part Number
Marking
STP12IE95F4
P12IE95F4
Package
TO220FP-4L
Packing
Tube
January 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/11
www.st.com
11
1 Page STP12IE95F4
1 Electrical ratings
Table 1.
Symbol
Absolute maximum rating
Parameter
VCS(SS) Collector-source voltage (VBS = VGS = 0 V)
VBS(OS) Base-source voltage (IC = 0, VGS = 0 V)
VSB(OS) Source-base voltage (IC = 0, VGS = 0 V)
VGS Gate-source voltage
IC Collector current
ICM Collector peak current (tP < 5ms)
IB Base current
IBM Base peak current (tP < 5ms)
Ptot Total dissipation at Tc = 25°C
Tstg Storage temperature
TJ Max. operating junction temperature
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
__max
Electrical ratings
Value
950
30
17
± 17
12
36
5
10
21
-40 to 150
150
Unit
V
V
V
V
A
A
A
A
W
°C
°C
Value
6
Unit
°C/W
3/11
3Pages Electrical characteristics
Figure 5. Reverse biased SOA
STP12IE95F4
Figure 6. Dynamic collector-emitter
voltage
Figure 7. Inductive load switching time Figure 8. Inductive load switching time
2.2 Test circuits
Figure 9. Static VCS(ON) test circuits
6/11
6 Page | |||
ページ | 合計 : 11 ページ | ||
|
PDF ダウンロード | [ STP12IE95F4 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
STP12IE95F4 | Emitter Switched Bipolar Transistor | ST Microelectronics |