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PDF 2SA1020 Data sheet ( Hoja de datos )

Número de pieza 2SA1020
Descripción One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE
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2SA1020
Preferred Device
One Watt High Current
PNP Transistor
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VCE 50 Vdc
VCB 50 Vdc
VEB 5.0 Vdc
IC 2.0 Adc
PD 900 mW
5.0 mW/°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5 W
12 mW/°C
Operating and Storage Junction Temperature TJ, Tstg −55 to
Range
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
RqJA
125 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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VOLTAGE AND CURRENT
ARE NEGATIVE FOR
PNP TRANSISTORS
COLLECTOR
2
3
BASE
PNP
1
EMITTER
1
23
TO−92 (TO−226)
CASE 29−10
STYLE 14
MARKING DIAGRAM
2SA
1020
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 3
1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2SA1020/D

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