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IRFSL4321PBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFSL4321PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRFSL4321PBF Datasheet, IRFSL4321PBF PDF,ピン配置, 機能
PD - 97105B
IRFS4321PbF
IRFSL4321PbF
Applications
l Motion Control Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l Hard Switched and High Frequency Circuits
Benefits
l Low RDSON Reduces Losses
l Low Gate Charge Improves the Switching
Performance
l Improved Diode Recovery Improves Switching &
EMI Performance
l 30V Gate Voltage Rating Improves Robustness
l Fully Characterized Avalanche SOA
VDSS
RDS(on)
ID
typ.
max.
D
G
S
HEXFET® Power MOSFET
150V
12m:
15m:
85A c
DD
S
D
G
S
GD
D2Pak
TO-262
IRFS4321PbF IRFSL4321PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS (Thermally limited)
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter
RθJC Junction-to-Case g
RθJA Junction-to-Ambient g
Max.
85 c
60
330
350
2.3
±30
120
-55 to + 175
300
Typ.
–––
–––
Max.
0.43*
40
Units
A
W
W/°C
V
mJ
°C
Units
°C/W
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes  through … are on page 2
www.irf.com
1
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