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PDF STU3055L2-60 Data sheet ( Hoja de datos )
| Número de pieza | STU3055L2-60 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
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STU/D3055L2-60
SamHop Microelectronics Corp.
Nov 26 , 2004 Ver1.2
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID RDS(ON) ( m ) Max
20V 14A
65 @ VGS = 4.5V
90 @ VGS = 2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
D
G
S
STU SERIES
TO-252AA(D-PAK)
GDS
STD SERIES
TO-251(l-PAK)
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @a TJ=125 C
-Pulsed b (300ms Pulse Width)
Drain-Source Diode Forward Current a
Maximum Power Dissipation a
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
R JC
R JA
Limit
20
12
14
23
10
50
-55 to 150
3
50
Unit
V
V
A
A
A
W
C
C /W
C /W
1
1 page  
S T U/D3055L2-60
V DD
V IN R L
D VOUT
VG S
RGEN G
S
F igure 11. S witching T es t C ircuit
td(on)
VOUT
ton
tr
td(off)
90%
10% INVE R TE D
toff
tf
90%
10%
VIN
10%
90%
50% 50%
PULS E WIDTH
F igure 12. S witching Waveforms
6
2
1
D =0 . 5
0.2
0.1
0.1 0.05
0.02
0.01
S INGLE PULS E
0.01
10-5
10-4
10-3
10-2
10-1
S quare Wave P uls e Duration (s ec)
P DM
t1
t2
1. R J A (t)=r (t) * R J A
2. R J A=S ee Datas heet
3. T J M-T A = P DM* R J A (t)
4. Duty C ycle, D=t1/t2
1
10
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STU3055L2-60.PDF ] | |
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| STU3055L2-60 | N-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
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