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Datasheet 2N6040 PDF ( 特性, スペック, ピン接続図 )

部品番号 2N6040
部品説明 (2N6040 - 2N6045) COMPLEMENTARY SILICON POWER TRANSISTORS
メーカ Motorola
ロゴ Motorola ロゴ 
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2N6040 Datasheet, 2N6040 PDF,ピン配置, 機能
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6040/D
Plastic Medium-Power
Complementary Silicon
Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
High DC Current Gain —
hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector–Emitter Sustaining Voltage — @ 100 mAdc —
VCEO(sus) = 60 Vdc (Min) — 2N6040, 2N6043
VCEO(sus) = 80 Vdc (Min) — 2N6041, 2N6044
VCEO(sus) = 100 Vdc (Min) — 2N6042, 2N6045
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc — 2N6040,41, 2N6043,44
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc — 2N6042, 2N6045
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
2N6040 2N6041 2N6042
Symbol 2N6043 2N6044 2N6045
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
VCEO
VCB
VEB
IC
60
60
80 100
80 100
5.0
8.0
16
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
IB
PD
120
75
0.60
Operating and Storage Junction,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg
– 65 to + 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) IndicatesJEDECRegisteredData.
Symbol
θJC
θJA
Max
1.67
57
Unit
Vdc
Vdc
Vdc
Adc
mAdc
Watts
W/_ C
_C
Unit
_ C/W
_ C/W
TA TC
4.0 80
PNP
2N6040
thru
2N6042 *
NPN
2N6043
thru
2N6045 *
*Motorola Preferred Device
DARLINGTON
8 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 – 80 – 100 VOLTS
75 WATTS
CASE 221A–06
TO–220AB
3.0 60
2.0 40
1.0 20
TC
TA
00
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la97r Power Transistor Device Data
1

1 Page



2N6040 pdf, ピン配列
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1 0.05
0.07
0.05 0.02
0.03 0.01
SINGLE PULSE
0.02
0.01
0.01 0.02 0.03 0.05 0.1
2N6040 thru 2N6042 2N6043 thru 2N6045
θJC(t) = r(t) θJC
P(pk)
θJC = 1.67°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10
t, TIME OR PULSE WIDTH (ms)
20 30 50
Figure 4. Thermal Response
100 200 300 500 1000
20 100 µs
10
5.0 500 µs
2.0
TJ = 150°C
1.0 ms
5.0 ms
dc
1.0 BONDING WIRE LIMITED
0.5 THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
0.2 SECOND BREAKDOWN LIMITED
0.1 CURVES APPLY BELOW RATED VCEO
2N6040, 2N6043
0.05 2N6041, 2N6044
2N6045
0.02
1.0
2.0 3.0 5.0 7.0 10
20 30 50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
70 100
Figure 5. Active–Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_ C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150_ C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
10,000
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0
2.0
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
PNP
NPN
5.0 10 20
50 100 200
f, FREQUENCY (kHz)
500 1000
Figure 6. Small–Signal Current Gain
300
TJ = 25°C
200
Cob
100
70 Cib
50
PNP
NPN
30
0.1 0.2
0.5 1.0 2.0
5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
50 100
Motorola Bipolar Power Transistor Device Data
3


3Pages


2N6040 電子部品, 半導体
2N6040 thru 2N6042 2N6043 thru 2N6045
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447
Mfax is a trademark of Motorola, Inc.
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315
Mfax: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609
INTERNET: http://www.mot.com/SPS/
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
6
Motorola Bipolar Power Transistor Device D2Nat6a040/D

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