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STP130NH02L の電気的特性と機能

STP130NH02LのメーカーはST Microelectronicsです、この部品の機能は「N-channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP130NH02L
部品説明 N-channel Power MOSFET
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STP130NH02L Datasheet, STP130NH02L PDF,ピン配置, 機能
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STB130NH02L
STP130NH02L
N-CHANNEL 24V - 0.0034 - 120A D²PAK/TO-220
STripFET™ III POWER MOSFET FOR DC-DC CONVERSION
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
STB130NH02L
STP130NH02L
24 V
24 V
< 0.0044 90 A(2)
< 0.0044 90 A(2)
TYPICAL RDS(on) = 0.0034 @ 10 V
TYPICAL RDS(on) = 0.005 @ 5 V
RDS(ON) * Qg INDUSTRY’s BENCHMARK
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
LOW THRESHOLD DEVICE
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
Figure 1:Package
3
1
D2PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
DESCRIPTION
The STB_P130NH02L utilizes the latest advanced
design rules of ST’s proprietary STripFET™ technology.
It is ideal in high performance DC-DC converter
applications where efficiency is to be achieved at very
high output currents.
APPLICATIONS
SYNCHRONOUS RECTIFICATIONS FOR
TELECOM AND COMPUTER
OR-ING DIODE
Figure 2: Internal Schematic Diagram
Table 2: Ordering Information
SALES TYPE
STB130NH02LT4
STP130NH02L
MARKING
B130NH02L
P130NH02L
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vspike(1)
VDS
VDGR
Drain-source Voltage Rating
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID(2) Drain Current (continuous) at TC = 25°C
ID(2)
IDM(3)
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
EAS (4) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
April 2005
PACKAGE
TO-263
TO-220
PACKAGING
TAPE & REEL
TUBE
Value
30
24
24
± 20
90
90
360
150
1
900
-55 to 175
Rev. 2.0
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
°C
1/13

1 Page





STP130NH02L pdf, ピン配列
STB130NH02L STP130NH02L
ELECTRICAL CHARACTERISTICS (continued)
Table 8: SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 10 V
ID = 45 A
RG = 4.7
VGS = 10 V
(Resistive Load, Figure )
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=10 V ID=90 A VGS=10 V
Qoss(6) Output Charge
VDS= 16 V
VGS= 0 V
Qgls(7) Third-quadrant Gate Charge VDS< 0 V
VGS= 10 V
Min.
Typ.
14
224
69
13
9
27
64
Max.
93
Unit
ns
ns
nC
nC
nC
nC
nC
Table 9: SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 10 V
ID = 45 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
Min.
Typ.
69
40
Max.
54
Unit
ns
ns
Table 10: SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM
Source-drain Current
Source-drain Current (pulsed)
90 A
360 A
VSD (5) Forward On Voltage
ISD = 45 A
VGS = 0
1.3 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(1) Garanted when external Rg=4.7 and tf < tfmax.
(2) Value limited by wire bonding
(3) Pulse width limited by safe operating area.
(4) Starting Tj = 25 oC, ID = 45A, VDD = 10V .
ISD = 90 A di/dt = 100A/µs
VDD = 15 V
Tj = 150°C
(see test circuit, Figure 5)
47
58
2.5
(5) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(6) Qoss = Coss*Vin , Coss = Cgd + Cds . See Appendix A
(7) Gate charge for synchronous operation
ns
nC
A
Figure 3: Safe Operating Area
Figure 4: Thermal Impedance
3/13


3Pages


STP130NH02L 電子部品, 半導体
STB130NH02L STP130NH02L
Figure 15: Unclamped Inductive Load Test Circuit
Figure 16: Unclamped Inductive Waveform
Figure 17: Switching Times Test Circuits For Resis-
tive Load
Figure 18: Gate Charge test Circuit
Figure 19: Test Circuit For Inductive Load Switch-
ing And Diode Recovery Times
6/13

6 Page



ページ 合計 : 13 ページ
 
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部品番号部品説明メーカ
STP130NH02L

N-channel Power MOSFET

ST Microelectronics
ST Microelectronics


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