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PDF STV160NF02LA Data sheet ( Hoja de datos )
| Número de pieza | STV160NF02LA | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | ST Microelectronics | |
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STV160NF02LA
N-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STV160NF02LA
20 V < 0.0027 Ω 160 A
s TYPICAL RDS(on) = 0.0018 Ω
s LOW THRESHOLD DRIVE
s ULTRA LOW ON-RESISTANCE
s ULTRA FAST SWITCHING
s 100% AVALANCHE TESTED
s VERY LOW GATE CHARGE
s LOW PROFILE, VERY LOW PARASITIC
INDUCTANCE PowerSO-10 PACKAGE
DESCRIPTION
The STV160NF02LA represents the second gen-
eration of Application Specific STMicroelectronics
well established STripFET™ process based on a
very unique strip layout design. The resulting
MOSFET shows unrivalled high packing density
with ultra low on-resistance and superior switching
charactestics. Process simplification also trans-
lates into improved manufacturing reproducibility.
This device is particularly suitable for high current,
low voltage switching application where efficiency
is crucial
APPLICATIONS
s BUCK CONVERTERS IN HIGH
PERFORMANCE TELECOM AND VRMs DC-
DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID(**)
Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
Note: Marking will be STV160NF02AL
December 2000
10
1
PowerSO-10
INTERNAL SCHEMATIC DIAGRAM
CONNECTION DIAGRAM (TOP VIEW)
Value
Unit
20 V
20 V
± 15 V
160 A
113 A
640 A
210 W
1.4 W/°C
330 mJ
–65 to 175
°C
175 °C
(1) VDD = 35V, ID = 45A, RG = 22Ω , L = 330µH, Starting Tj=25°C
(**)Limited only maximum junction temperature allowed by
PowerSO-10
1/8
1 page  
STV160NF02LA
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Basic Schematic For Motherboard VRM Whith Basic Schematic Mosfets Switch Used In
Synchronous Rectification
Secondary Side Of a Froward Convert
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STV160NF02LA.PDF ] | |
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