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PDF 1N5822 Data sheet ( Hoja de datos )
| Número de pieza | 1N5822 | |
| Descripción | (1N5820 - 1N5822) Axial Lead Rectifiers | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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 1. 3A, 40V, Schottky Barrier Rectifier  Hay una vista previa y un enlace de descarga de 1N5822 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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1N5820, 1N5821, 1N5822
1N5820 and 1N5822 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low−voltage, high−frequency inverters, free wheeling diodes, and
polarity protection diodes.
Features
• Extremely Low VF
• Low Power Loss/High Efficiency
• Low Stored Charge, Majority Carrier Conduction
• Shipped in plastic bags, 500 per bag
• Available in Tape and Reel, 1500 per reel, by adding a “RL’’ suffix to
the part number
• Pb−Free Packages are Available*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Cathode indicated by Polarity Band
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
MARKING DIAGRAM
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 9
1
A
1N
582x
YYWWG
G
A = Assembly Location
1N582x = Device Code
x = 0, 1, or 2
YY = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
1N5820/D
1 page  
1N5820, 1N5821, 1N5822
125
20 15
125
20
10 15
115
8.0 115
10
8.0
105
RqJA (°C/W) = 70
95 50
40
85 28
105
RqJA (°C/W) = 70
95 50
40
85 28
75
2.0
3.0 4.0 5.0
7.0
10
VR, REVERSE VOLTAGE (VOLTS)
15 20
Figure 1. Maximum Reference Temperature
1N5820
75
3.0 4.0 5.0
7.0
10
15
VR, REVERSE VOLTAGE (VOLTS)
20
30
Figure 2. Maximum Reference Temperature
1N5821
125
20
115 15
10
8.0
105
95
85
75
4.0
RqJA (°C/W) = 70
50
40
28
5.0 7.0
10
15 20
VR, REVERSE VOLTAGE (VOLTS)
30 40
Figure 3. Maximum Reference Temperature
1N5822
40
35 MAXIMUM
TYPICAL
30
25
20
15
10
BOTH LEADS TO HEATSINK,
5.0 EQUAL LENGTH
0
0 1/8 2/8 3/8 4/8 5/8 6/8 7/8 1.0
L, LEAD LENGTH (INCHES)
Figure 4. Steady−State Thermal Resistance
1.0
The temperature of the lead should be measured using a ther-
0.5 mocouple placed on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large
0.3 enough so that it will not significantly respond to heat surges
0.2 generated in the diode as a result of pulsed operation once
steady−state conditions are achieved. Using the measured val-
0.1 ue of TL, the junction temperature may be determined by:
TJ = TL + DTJL
0.05
0.03
0.02
0.01
0.2
0.5 1.0 2.0
5.0 10
20 50
t, TIME (ms)
LEAD LENGTH = 1/4″
Ppk
tp
t1
Ppk
TIME
DUTY CYCLE = tp/t1
PEAK POWER, Ppk, is peak of an
equivalent square power pulse.
DTJL = Ppk • RqJL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)] where:
DTJL = the increase in junction temperature above the lead temperature.
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t1 + tp) = normalized value of transient thermal resistance at time
t1 + tp, etc.
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
Figure 5. Thermal Response
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 1N5822.PDF ] | |
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