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PDF 1N5817 Data sheet ( Hoja de datos )
| Número de pieza | 1N5817 | |
| Descripción | (1N5817 - 1N5819) Axial Lead Rectifiers | |
| Fabricantes | ON Semiconductor | |
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1N5817, 1N5818, 1N5819
1N5817 and 1N5819 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low−voltage, high−frequency inverters, free wheeling diodes, and
polarity protection diodes.
Features
• Extremely Low VF
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• These are Pb−Free Devices*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max for 10 Seconds
• Polarity: Cathode Indicated by Polarity Band
• ESD Ratings: Machine Model = C (>400 V)
Human Body Model = 3B (>8000 V)
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SCHOTTKY BARRIER
RECTIFIERS
1.0 AMPERE
20, 30 and 40 VOLTS
AXIAL LEAD
CASE 59
STYLE 1
MARKING DIAGRAM
A
1N581x
YYWWG
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 10
1
A =Assembly Location
1N581x =Device Number
x= 7, 8, or 9
YY =Year
WW =Work Week
G =Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
1N5817/D
1 page  
1N5817, 1N5818, 1N5819
NOTE 5. — THERMAL CIRCUIT MODEL
(For heat conduction through the leads)
RqS(A)
RqL(A)
RqJ(A)
RqJ(K) RqL(K) RqS(K)
TA(A)
TL(A)
TC(A)
PD
TJ TC(K)
TA(K)
TL(K)
Use of the above model permits junction to lead thermal re-
sistance for any mounting configuration to be found. For a
given total lead length, lowest values occur when one side of
the rectifier is brought as close as possible to the heatsink.
Terms in the model signify:
TA = Ambient Temperature TC = Case Temperature
TL = Lead Temperature
TJ = Junction Temperature
RqS = Thermal Resistance, Heatsink to Ambient
RqL = Thermal Resistance, Lead to Heatsink
RqJ = Thermal Resistance, Junction to Case
PD = Power Dissipation
(Subscripts A and K refer to anode and cathode sides, re-
spectively.) Values for thermal resistance components are:
RqL = 100°C/W/in typically and 120°C/W/in maximum
RqJ = 36°C/W typically and 46°C/W maximum.
30
20
10
7.0
5.0 TC = 100°C
20
TL = 70°C
f = 60 Hz
10
7.0
1 Cycle
3.0
2.0
25°C
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 7. Typical Forward Voltage
5.0
Surge Applied at
Rated Load Conditions
3.0
1.0 2.0 3.0 5.0 7.0 10
20
NUMBER OF CYCLES
30
40 70 100
Figure 8. Maximum Non−Repetitive Surge Current
30
20
TJ = 125°C
15
5.0 100°C
3.0
2.0
75°C
1.0
0.5
0.3 25°C
0.2
0.1 1N5817
0.05
1N5818
1N5819
0.03
0 4.0 8.0 12 16 20 24 28 32 36 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Typical Reverse Current
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 1N5817.PDF ] | |
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