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IRFB3507 の電気的特性と機能

IRFB3507のメーカーはInternational Rectifierです、この部品の機能は「(IRFx3507) HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB3507
部品説明 (IRFx3507) HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB3507 Datasheet, IRFB3507 PDF,ピン配置, 機能
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Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
G
PD - 96903A
IRFB3507
IRFS3507
IRFSL3507
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
S ID
75V
7.0m:
8.8m:
97A
G DS
TO-220AB
IRFB3507
G DS
D2Pak
IRFS3507
G DS
TO-262
IRFSL3507
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current d
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy e
IAR Avalanche Current c
EAR Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case k
RθCS
Case-to-Sink, Flat Greased Surface , TO-220
RθJA Junction-to-Ambient, TO-220 k
RθJA Junction-to-Ambient (PCB Mount) , D2Pak jk
www.irf.com
Max.
97c
69c
390
190
1.3
± 20
5.0
-55 to + 175
300
10lbxin (1.1Nxm)
280
See Fig. 14, 15, 16a, 16b
Typ.
–––
0.50
–––
–––
Max.
0.77
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
11/04/04

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IRFB3507 pdf, ピン配列
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
4.5V
1
0.1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
0.1
2
VDS = 25V
60µs PULSE WIDTH
4 6 8 10
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com
IRFB3507/IRFS3507/IRFSL3507
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
4.5V
10
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
2.5
ID = 97A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
12.0
ID= 58A
10.0
VDS= 60V
VDS= 38V
VDS= 15V
8.0
6.0
4.0
2.0
0.0
0
20 40 60 80 100
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3


3Pages


IRFB3507 電子部品, 半導体
IRFB3507/IRFS3507/IRFSL3507
4.5
4.0
3.5
3.0
ID = 100µA
2.5 ID = 250µA
2.0
ID = 1.0mA
ID = 1.0A
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
14
12
10
8
6
4 IF = 39A
VR = 64V
2 TJ = 25°C _____
TJ = 125°C ----------
0
100 200 300 400 500 600 700 800 900 1000
dif/dt (A/µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
300
14
12
10
8
6
4 IF = 19A
VR = 64V
2 TJ = 25°C _____
TJ = 125°C ----------
0
100 200 300 400 500 600 700 800 900 1000
dif/dt (A/µs)
Fig. 17 - Typical Recovery Current vs. dif/dt
350
300
250
200
150
100
50
IF = 19A
VR = 64V
TJ = 25°C _____
TJ = 125°C ----------
0
100 200 300 400 500 600 700 800 900 1000
dif/dt (A/µs)
Fig. 19 - Typical Stored Charge vs. dif/dt
250
200
150
100
IF = 39A
50
VR = 64V
TJ = 25°C _____
TJ = 125°C ----------
0
100 200 300 400 500 600 700 800 900 1000
dif/dt (A/µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6 www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRFB3507

(IRFx3507) HEXFET Power MOSFET

International Rectifier
International Rectifier


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