Schottky Barrier Diodes (SBD)
Silicon epitaxial planar type
For high frequency rectification
• IF(AV) = 1 A rectification is possible
• VR = 40 V is guaranteed
• Automatic insertion with the emboss taping is possible
• New Mini-power 2-pin package
I Absolute Maximum Ratings Ta = 25°C
Reverse voltage (DC)
Peak reverse voltage
Average forward current *1
Non-repetitive peak forward-
Tj −40 to +125
Tstg −40 to +125
Note) *1: With a printed circuit board (copper foil area 2 mm × 2 mm or
more on both cathode and anode sides)
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
1 : Anode
2 : Cathode
Marking Symbol: PB
I Electrical Characteristics Ta = 25°C
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Reverse recovery time *
IR VR = 40 V
VF IF = 1 A
Ct VR = 10 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 20 MHz
3. *: trr measuring instrument
Bias Application Unit N-50BU
Rs = 50 Ω
Wave Form Analyzer
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
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