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PDF MA736 Data sheet ( 特性 )

部品番号 MA736
部品説明 Silicon epitaxial planar type
メーカ Panasonic Semiconductor
ロゴ Panasonic Semiconductor ロゴ 

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MA736 Datasheet, MA736 PDF,ピン配置, 機能
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Schottky Barrier Diodes (SBD)
MA2Q736 (MA736)
Silicon epitaxial planar type
For high frequency rectification
I Features
IF(AV) = 1 A rectification is possible
VR = 40 V is guaranteed
Automatic insertion with the emboss taping is possible
New Mini-power 2-pin package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Peak reverse voltage
Average forward current *1
Non-repetitive peak forward-
surge-current *2
VR
VRRM
IF(AV)
IFSM
40
40
1
30
V
V
A
A
Junction temperature
Storage temperature
Tj 40 to +125
Tstg 40 to +125
°C
°C
Note) *1: With a printed circuit board (copper foil area 2 mm × 2 mm or
more on both cathode and anode sides)
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
2.5±0.3
2
Unit: mm
2.15±0.3
1
8°
0.25+–00..015
1.4±0.2
1 : Anode
2 : Cathode
NMiniP2-J1 Package
Marking Symbol: PB
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time *
IR VR = 40 V
VF IF = 1 A
Ct VR = 10 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100
2 mA
0.55 V
50 pF
30 ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 20 MHz
3. *: trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50
Wave Form Analyzer
(SAS-8130)
Ri = 50
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00019AED
1

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