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IXSX80N60B PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXSX80N60B
部品説明 High Current IGBT Short Circuit SOA Capability
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXSX80N60B Datasheet, IXSX80N60B PDF,ピン配置, 機能
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High Current IGBT
Short Circuit SOA Capability
IXSK 80N60B
IXSX 80N60B
VCES =
IC25 =
=VCE(sat)
600 V
160 A
2.5 V
Symbol
V
CES
VCGR
V
CES
VGEM
I
C25
IC90
I
L(RMS)
ICM
SSOA
(RBSOA)
tsc
SCSOA
PC
TJ
TJM
Tstg
TL
Md
Weight
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
Maximum Ratings
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
600 V
600 V
±20 V
±30 V
T
C
=
25°C
TC = 90°C
T
C
=
90°C
TC = 25°C, 1 ms
(silicon chip capability)
(silicon chip capability)
(silicon chip capability)
VGE = 15 V, TVJ = 125°C, RG = 5
Clamped inductive load
VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C
R
G
=
5
Ω,
non-repetitive
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
160
80
75
300
ICM = 160
@ 0.8 V
CES
10
A
A
A
A
A
µs
500 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
0.4/6 Nm/lb.in.
PLUS 247
TO-264
6g
10 g
PLUS 247TM
(IXSX)
G
C
E
TO-264 AA
(IXSK)
(TAB)
G
C
E
(TAB)
G = Gate
C = Collector
E = Emitter
TAB = Collector
Features
! International standard packages
! Very high current, fast switching IGBT
! Low V
CE(sat)
- for minimum on-state conduction
losses
! MOS Gate turn-on
- drive simplicity
Test Conditions
IC = 500 µA, VGE = 0 V
IC = 8 mA, VCE = VGE
VCE = VCES
V =0V
GE
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600 V
4 8V
TJ = 25°C
T
J
=
125°C
200 µA
2 mA
±200 nA
2.5 V
Applications
! AC motor speed control
! DC servo and robot drives
! DC choppers
! Uninterruptible power supplies (UPS)
! Switch-mode and resonant-mode
power supplies
Advantages
! PLUS 247TM package for clip or spring
mounting
! Space savings
! High power density
© 2002 IXYS All rights reserved
98721B (07/02)

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IXSX80N60B

High Current IGBT Short Circuit SOA Capability

IXYS Corporation
IXYS Corporation

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