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IRF3007SPBF の電気的特性と機能

IRF3007SPBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF3007SPBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF3007SPBF Datasheet, IRF3007SPBF PDF,ピン配置, 機能
Typical Applications
l Industrial Motor Drive
Features
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
Description
This design of HEXFET® Power MOSFETs utilizes
the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features
of this HEXFET power MOSFET are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These combine
to make this design an extremely efficient and reliable
device for use in a wide variety of applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (6 sigma)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Value‡
Avalanche Current
Repetitive Avalanche Energy†
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
PD - 95494A
IRF3007SPbF
IRF3007LPbF
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 0.0126
S ID = 62A
D2Pak
TO-262
IRF3007SPbF IRF3007LPbF
Max.
62
44
320
120
0.8
± 20
290
946
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady state)**
Typ.
–––
–––
** This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
www.irf.com
Max.
1.25
62
Units
°C/W
1
07/23/10

1 Page





IRF3007SPBF pdf, ピン配列
IRF3007S/LPbF
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
1
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100 TJ = 175°C
10 TJ = 25°C
1
4.0
VDS = 25V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
9.0
Fig 3. Typical Transfer Characteristics
www.irf.com
100
TJ = 175°C
80
60
TJ = 25°C
40
20
0
0
VDS = 25V
20µs PULSE WIDTH
40 80 120
ID, Drain-to-Source Current (A)
160
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3


3Pages


IRF3007SPBF 電子部品, 半導体
IRF3007S/LPbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
700
ID
600 TOP 20A
34A
500 BOTTOM 48A
400
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
4.0
ID = 250µA
3.0
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
www.irf.com

6 Page



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共有リンク

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部品番号部品説明メーカ
IRF3007SPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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