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IRF7420のメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRF7420 |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7420ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
www.DataSheet4U.com
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
VDSS
-12V
PD - 94278
IRF7420
HEXFET® Power MOSFET
RDS(on) max
14mΩ@VGS = -4.5V
17.5mΩ@VGS = -2.5V
26mΩ@VGS = -1.8V
ID
-11.5A
-9.8A
-8.1A
Description
These P-Channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
S
1
techniques to achieve the extremely low on-resistance S 2
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery S 3
and load management applications..
G4
A
8D
7D
6D
5D
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Top View
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-11.5
-9.2
-46
2.5
1.6
20
±8
-55 to +150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
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Parameter
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
1
07/11/01
1 Page IRF7420
100
VGS
TOP
-7.0V
-5.0V
-4.5V
10
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
1
0.1 -1.0V
0.01
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VGS
TOP
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
10
-1.5V
-1.2V
BOTTOM -1.0V
1 -1.0V
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
10 TJ = 150 °C
TJ = 25 °C
1
0.1
0.5
V DS= -10V
20µs PULSE WIDTH
1.0 1.5 2.0
-VGS , Gate-to-Source Voltage (V)
2.5
Fig 3. Typical Transfer Characteristics
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2.0 ID = -11.5A
1.5
1.0
0.5
VGS = -4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7420
0.025
0.020
0.015
0.010
ID = -11.5A
0.005
0.0
2.0 4.0 6.0
-VGS, Gate -to -Source Voltage (V)
8.0
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.08
0.06
0.04
VGS = -1.8V
0.02
VGS = -2.5V
0
0.0
VGS = -4.5V
10.0 20.0 30.0 40.0
-ID , Drain Current ( A )
50.0
Fig 13. Typical On-Resistance Vs.
Drain Current
QGS
VG
QG
QGD
Charge
Fig 14a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ IRF7420 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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