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75N75 の電気的特性と機能

75N75のメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSTFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 75N75
部品説明 N-CHANNEL POWER MOSTFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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75N75 Datasheet, 75N75 PDF,ピン配置, 機能
www.DataSheet4U.com
UNISONIC TECHNOLOGIES CO., LTD
75N75
75Amps, 75Volts
N-CHANNEL POWER MOSTFET
1
Power MOSFET
TO- 251
DESCRIPTION
The UTC 75N75 is n-channel enhancement mode power field
effect transistors with stable off-state characteristics, fast
switching speed, low thermal resistance, usually used at telecom
and computer application.
FEATURES
* RDS(ON) = 12.5m@VGS = 10 V
* Ultra low gate charge ( typical 90 nC )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1
TO - 252
1 TO-220
1 TO-220F
*Pb-free plating product number: 75N75L
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
Package
75N75-TA3-T
75N75L-TA3-T
TO-220
75N75-TF3-T
75N75L-TF3-T
TO-220F
75N75-TM3-T
75N75L-TM3-T
TO-251
75N75-TN3-R
75N75L-TN3-R
TO-252
75N75-TN3-T
75N75L-TN3-T
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tape Reel
Tube
75N75L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
TN 3: TO-252
(3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd.
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75N75 pdf, ピン配列
75N75
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
IS
Pulsed Source Current
ISM
Diode Forward Voltage
VSD IS = 48A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr IS = 48A, VGS = 0 V
Qrr dIF / dt = 100 A/µs
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=0.24mH, IAS=48A, RG=20, Starting TJ=25
3. ISD48A, di/dt300A/µs, VDDBVDSS, Starting TJ=25
4. Pulse Test: Pulse Width300µs,Duty Cycle2%
5. Essentially independent of operating temperature.
Power MOSFET
MIN TYP MAX UNIT
75
300
1.4
90
300
A
V
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-097,A


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75N75 電子部品, 半導体
75N75
TYPICAL CHARACTERISTICS
On-State Characteristics
V GS
Top: 15V
10 V
8V
102
7V
6V
5 .5V
5V
Bottorm : 4.5V
101 4.5V
100
10-1
100
101
Drain-Source Voltage, VDS (V)
On-Resistance Variation vs. Drain
15 Current and Gate Voltage
14
13 VGS=10V
12
11
0 10 20 30 40 50 60 70 80 90 100
Drain Current, ID (A)
6000
5000
4000
Capacitance Characteristics
(Non-Repetitive)
CISS=CGS+CGD (CDS=shorted)
COSS=CDS+CGD
CRSS=CGD
CISS
3000
2000
1000
0
CRSS
COSS
*Note:
1. VGS=0V
2. f = 1MHz
5 10 15 20 25 30 35
Drain-Source Voltage, VDC (V)
Power MOSFET
Transfer Characteristics
102
101
1002
Note:
1. VDS=25V
2. 20µs Pulse Test
3 4 5 6 7 8 9 10
Gate-Source Voltage, VGS (V)
Reverse Drain Current vs. Allowable Case
Temperature
102
150
101
25
100
0.2
*Note:
1. VGS=0V
2. 250µs Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
Gate Charge Characteristics
12
10
8 VDS=38V
6 VDS=60V
4
2 *Note: ID=48A
0
0 5 10 15 20 25 30 35 40 45
Total Gate Charge, QG (nC)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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共有リンク

Link :


部品番号部品説明メーカ
75N75

N-Channel MOSFET Transistor

Inchange Semiconductor
Inchange Semiconductor
75N75

N-CHANNEL POWER MOSTFET

Unisonic Technologies
Unisonic Technologies
75N75

N-Channel Enhancement Mode MOSFET

Tuofeng Semiconductor
Tuofeng Semiconductor


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