(PDF) VN10K-TO18 Datasheet - N-CHANNEL ENHANCEMENT MODE MOSFET

Número de pieza	VN10K-TO18
Descripción	N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes	Seme LAB
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No Preview Available ! www.DataSheet4U.com VN10K-TO18 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) N–CHANNEL ENHANCEMENT MODE MOSFET 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 TO18 PACKAGE Underside View PIN 1 - Source PIN 2 - Gate PIN 3 - Drain & Case G D S ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C unless otherwise stated) VDS Drain – Source Voltage 60V VGS Gate – Source Voltage +15 , –0.3 V ID Continuous Drain Current @Tamb = 25°C 0.17A @Tamb = 100°C IDM Pulsed Drain Current 1 0.11A 1.0A PD Power Dissipation @Tamb = 25°C 1.5W @Tamb = 100°C 0.12W TSTG , TJ Maximum Junction and Storage Temperature Range –55 to 150°C NOTE: 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.10/99 1 page

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PDF VN10K-TO18 Data sheet ( Hoja de datos )