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IRGP4068DPBF の電気的特性と機能

IRGP4068DPBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGP4068DPBF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRGP4068DPBF Datasheet, IRGP4068DPBF PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 97250
IRGP4068DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
IRGP4068D-EPbFFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5 µS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (ILM)
• Positive VCE (ON) Temperature co-efficient
• Ultra-low VF Hyperfast Diode
• Tight parameter distribution
• Lead Free Package
C
G
E
n-channel
VCES = 600V
IC = 48A, TC = 100°C
tSC 5µs, TJ(max) = 175°C
VCE(on) typ. = 1.65V
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(on), Low Switching Losses
and Ultra-low VF
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
CC
GC E
TO-247AC
IRGP4068DPbF
GC E
TO-247AD
IRGP4068D-EPbF
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 160°C
IFSM
IFM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
cClamped Inductive Load Current
Diode Continous Forward Current
dDiode Non Repetitive Peak Surge Current @ TJ = 25°C
dDiode Peak Repetitive Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
600
96
48
192
192
8.0
175
16
±20
±30
330
170
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
80
Max.
0.45
2.0
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com
08/16/06

1 Page





IRGP4068DPBF pdf, ピン配列
IRGP4068DPbF/IRGP4068D-EPbF
100
90
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
1000
100
10
1
10
100
VCE (V)
Fig. 3 - Reverse Bias SOA
TJ = 175°C; VGE =15V
1000
200
180
160 VGE = 18V
140 VGE = 15V
120
VGE = 12V
VGE = 10V
100 VGE = 8.0V
80
60
40
20
0
0 2 4 6 8 10
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175 200
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
200
180
160 VGE = 18V
140
VGE = 15V
VGE = 12V
120
VGE = 10V
VGE = 8.0V
100
80
60
40
20
0
0 2 4 6 8 10
VCE (V)
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
200
180 VGE = 18V
160
VGE = 15V
VGE = 12V
140
VGE = 10V
VGE = 8.0V
120
100
80
60
40
20
0
0 2 4 6 8 10
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80µs
www.irf.com
3


3Pages


IRGP4068DPBF 電子部品, 半導体
IRGP4068DPbF/IRGP4068D-EPbF
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
R2R2
τ2 τ2
R3R3
τ3 τ3
R4R4
τCτ
Ri (°C/W)
0.0248
0.0652
τi (sec)
0.000014
0.000050
τ4τ4 0.1537 0.001041
CiC= iτi/Ri/iRi
0.2065 0.013663
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
τJ τJ
τ1 τ1
R1R1
R2R2
τ2 τ2
R3R3
τ3 τ3
R4R4
τCτ
Ri (°C/W)
0.0400
0.7532
τi (sec)
0.000030
0.000717
τ4τ4 0.8317 0.004860
CiC= iτi/Ri/iRi
0.3766 0.036590
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRGP4068DPBF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier


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