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Datasheet HCSXXX Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | HCSxxx | Memory Programming Specification
HCSXXX
HCSXXX Memory Programming Specification
This document includes the programming specifications for the following devices:
• HCS200 • HCS201 • HCS300 • HCS301 • HCS320 • HCS360 • HCS361 • HCS362 • HCS410 • HCS412 • HCS500 • HCS512 • HCS515
1.2
Pr | Microchip Technology | data |
HCS Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | HCS00D | Radiation Hardened Quad 2-Input NAND Gate HCS00MS
August 1995
Radiation Hardened Quad 2-Input NAND Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW
A1 1 B1 2 Y1 3 A2 4 B2 5 Y2 6 GND 7 14 VCC 13 B4 12 A4 11 Y4 10 B3 9 A3 8 Y3
Features
• 3 Micron Radiation Hardened SOS CMOS • Total Dos Intersil Corporation gate | | |
2 | HCS00DMSR | Radiation Hardened Quad 2-Input NAND Gate HCS00MS
August 1995
Radiation Hardened Quad 2-Input NAND Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW
A1 1 B1 2 Y1 3 A2 4 B2 5 Y2 6 GND 7 14 VCC 13 B4 12 A4 11 Y4 10 B3 9 A3 8 Y3
Features
• 3 Micron Radiation Hardened SOS CMOS • Total Dos Intersil Corporation gate | | |
3 | HCS00HMSR | Radiation Hardened Quad 2-Input NAND Gate HCS00MS
August 1995
Radiation Hardened Quad 2-Input NAND Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW
A1 1 B1 2 Y1 3 A2 4 B2 5 Y2 6 GND 7 14 VCC 13 B4 12 A4 11 Y4 10 B3 9 A3 8 Y3
Features
• 3 Micron Radiation Hardened SOS CMOS • Total Dos Intersil Corporation gate | | |
4 | HCS00K | Radiation Hardened Quad 2-Input NAND Gate HCS00MS
August 1995
Radiation Hardened Quad 2-Input NAND Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW
A1 1 B1 2 Y1 3 A2 4 B2 5 Y2 6 GND 7 14 VCC 13 B4 12 A4 11 Y4 10 B3 9 A3 8 Y3
Features
• 3 Micron Radiation Hardened SOS CMOS • Total Dos Intersil Corporation gate | | |
5 | HCS00KMSR | Radiation Hardened Quad 2-Input NAND Gate HCS00MS
August 1995
Radiation Hardened Quad 2-Input NAND Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW
A1 1 B1 2 Y1 3 A2 4 B2 5 Y2 6 GND 7 14 VCC 13 B4 12 A4 11 Y4 10 B3 9 A3 8 Y3
Features
• 3 Micron Radiation Hardened SOS CMOS • Total Dos Intersil Corporation gate | | |
6 | HCS00MS | Radiation Hardened Quad 2-Input NAND Gate HCS00MS
August 1995
Radiation Hardened Quad 2-Input NAND Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW
A1 1 B1 2 Y1 3 A2 4 B2 5 Y2 6 GND 7 14 VCC 13 B4 12 A4 11 Y4 10 B3 9 A3 8 Y3
Features
• 3 Micron Radiation Hardened SOS CMOS • Total Dos Intersil Corporation gate | | |
7 | HCS02D | Radiation Hardened Quad 2-Input NOR Gate HCS02MS
August 1995
Radiation Hardened Quad 2-Input NOR Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW
Y1 1 A1 2 B1 3 Y2 4 14 VCC 13 Y4 12 B4 11 A4 10 Y3 9 B3 8 A3
Features
• 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD(Si) � Intersil Corporation gate | |
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Número de pieza | Descripción | Fabricantes | |
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