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2N60のメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL MOSFET」です。 |
部品番号 | 2N60 |
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部品説明 | N-CHANNEL MOSFET | ||
メーカ | Unisonic Technologies | ||
ロゴ | |||
このページの下部にプレビューと2N60ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
www.DataSheet4U.com
UNISONIC TECHNOLOGIES CO., LTD
2N60
2 Amps, 600 Volts
N-CHANNEL MOSFET
1
Power MOSFET
TO- 251
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 3.8Ω@VGS = 10V.
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (Crss = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1
TO - 252
1 TO-220
1 TO-220F
*Pb-free plating product number: 2N60L
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
Package
2N60-TA3-T
2N60L-TA3-T
TO-220
2N60-TF3-T
2N60L-TF3-T
TO-220F
2N60-TM3-T
2N60L-TM3-T
TO-251
2N60-TN3-R
2N60L-TN3-R
TO-252
2N60-TN3-T
2N60L-TN3-T
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tape Reel
Tube
2N60L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
TN 3: TO-252
(3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-053,E
1 Page 2N60
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Switching Characteristics
Turn-On Delay Time
tD (ON)
Rise Time
Turn-Off Delay Time
tR VDD =300V, ID =2.4A, RG=25Ω
tD(OFF) (Note 1,2)
Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
VDS=480V, VGS=10V, ID=2.4A
(Note 1, 2)
QGD
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, ISD = 2.0 A
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current
ISM
Reverse Recovery Time
Reverse Recovery Charge
tRR VGS = 0 V, ISD = 2.4A,
QRR di/dt = 100 A/µs (Note1)
Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2%
2. Essentially Independent of Operating Temperature
MIN TYP MAX UNIT
10 30 ns
25 60 ns
20 50 ns
25 60 ns
9.0 11 nC
1.6 nC
4.3 nC
1.4
2.0
8.0
180
0.72
V
A
A
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-053,E
3Pages 2N60
TYPICAL CHARACTERISTICS
On-Region Characteristics
100
V GS
Top: 15.0V
10 .0V
8 .0V
7 .0V
6 .5V
6 .0V
Bottorm :
5.5V
10-1
10-2
10-1
250 s Pulse Test
TC=25
100 101
Drain-Source Voltage, VDS (V)
On-Resistance Variation vs. Drain Current and
Gate Voltage
12 TJ=25
10
8
VGS=10V
VGS=20V
6
4
2
0
0 12 3456
Drain Current, ID (A)
Capacitance vs. Drain-Source Voltage
500
400
300
200
Ciss=CGS+CGD
(CDS=shorted)
Coss=CDS+CGD
Ciss
Crss=CGD
Coss
100
VGS=0V
f = 1MHz
0
10-1
Crss
100
101
Drain-Source Voltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
Transfer Characteristics
VDS=50V
250 s Pulse Test
85
100 25
-20
10-1
2
46
8
Gate-Source Voltage, VGS (V)
10
Body Diode Forward Voltage Variationvs.
Source Current and Temperature
VGS=0V
250 s Pulse Test
100
125
25
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
Gate Charge vs. Gate Charge Voltage
12
VDS=120V
10 VDS=300V
VDS=480V
8
6
4
2
ID=2.4A
0
0 2 4 6 81
0
Total Gate Charge, QG (nC)
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QW-R502-053,E
6 Page | |||
ページ | 合計 : 8 ページ | ||
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2N60 | N-CHANNEL MOSFET | Unisonic Technologies |
2N60-E | N-CHANNEL POWER MOSFET | Unisonic Technologies |
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