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PDF IRF6626 Data sheet ( Hoja de datos )
| Número de pieza | IRF6626 | |
| Descripción | DirectFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 96976D
IRF6626
l RoHS compliant containing no lead or bromide
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for both Sync. FET and some Control FET
applications
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 4.0mΩ@ 10V 5.2mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
19nC 6.7nC 1.6nC 5.4nC 13nC 1.8V
ST DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
Description
The IRF6626 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6626 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6626 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
hContinuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
kContinuous Drain Current, VGS @ 10V
ePulsed Drain Current
fSingle Pulse Avalanche Energy
ÃeAvalanche Current
Max.
30
±20
16
13
72
130
24
13
Units
V
A
mJ
A
15 6.0
ID = 16A
5.0 ID= 13A VDS= 24V
10
TJ = 125°C
4.0 VDS= 15V
3.0
5
TJ = 25°C
2.0
1.0
0
345678
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs
Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
0.0
0
10 20 30
QG Total Gate Charge (nC)
Fig 2. Typical On-Resistance vs. Gate Voltage
Starting TJ = 25°C, L = 0.29mH, RG = 25Ω, IAS = 13A.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
1
11/17/05
1 page  
1000
100
TJ = 150°C
10
TJ = 25°C
TJ = 40°C
1
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
80
70
60
50
40
30
20
10
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
100
80
60
1000
100
10
1
IRF6626
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
1msec
10msec
0.1 Ta = 25°C
Tj = 150°C
Single Pulse
0.01
0.01
0.10
1.00
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
2.2
2.0
1.8
1.6
1.4 ID = 50µA
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Threshold Voltage vs. Temperature
ID TOP
5.6A
8.4A
BOTTOM 13A
40
20
www.irf.com
0
25 50 75 100 125
Starting T J , Junction Temperature (°C)
150
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF6626.PDF ] | |
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