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IXTC13N50のメーカーはIXYS Corporationです、この部品の機能は「Power MOSFET ISOPLUS220」です。 |
部品番号 | IXTC13N50 |
| |
部品説明 | Power MOSFET ISOPLUS220 | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXTC13N50ダウンロード(pdfファイル)リンクがあります。 Total 2 pages
www.DataSheet4U.com
ADVANCE TECHNICAL INFORMATION
Power MOSFET
ISOPLUS220TM
IXTC 13N50
Electrically Isolated Back Surface
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
VDSS
ID25
RDS(on)
= 500
= 12
= 0.4
V
A
Ω
Symbol
VDSS
V
DGR
VGS
VGSM
ID25
IDM
I
AR
EAR
dv/dt
PD
T
J
TJM
T
stg
TL
Weight
Symbol
VDSS
V
GS(th)
I
GSS
IDSS
R
DS(on)
ISOPLUS 220TM
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
500 V
500 V
±20 V
±30 V
12 A
48 A
13 A
18 mJ
5 V/ns
140
-55 ... +150
150
-55 ... +150
300
3
W
°C
°C
°C
°C
g
Test Conditions
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 2.5 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS
VGS = 0 V
VGS = 10 V, ID = IT
Notes 1, 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500
2
TJ = 25°C
TJ = 125°C
V
4V
±100 nA
200 µA
1 mA
0.4 Ω
G
D
S
Isolated back surface*
G = Gate,
S = Source
D = Drain,
* Patent pending
Features
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
-Isolatedmountingsurface
-2500Velectricalisolation
l Lowdraintotabcapacitance(<35pF)
l Low RDS (on) HDMOSTM process
l Ruggedpolysilicongatecellstructure
l UnclampedInductiveSwitching(UIS)
rated
Applications
l DC-DC converters
l Batterychargers
l Switched-modeandresonant-mode
power supplies
l DC choppers
l AC motor control
Advantages
l Easy assembly: no screws or isolation
foilsrequired
l Space savings
l High power density
l Lowcollectorcapacitancetoground
(low EMI)
© 2001 IXYS All rights reserved
98823 (05/01)
1 Page | |||
ページ | 合計 : 2 ページ | ||
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部品番号 | 部品説明 | メーカ |
IXTC13N50 | Power MOSFET ISOPLUS220 | IXYS Corporation |