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MRF5S19090HSR3のメーカーはFreescale Semiconductorです、この部品の機能は「RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs」です。 |
部品番号 | MRF5S19090HSR3 |
| |
部品説明 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | ||
メーカ | Freescale Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとMRF5S19090HSR3ダウンロード(pdfファイル)リンクがあります。 Total 12 pages
www.DataSheet4U.com
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 850 mA,
Pout = 18 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.8%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — - 51 dB in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 90 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF5S19090H
Rev. 2, 5/2006
MRF5S19090HR3
MRF5S19090HSR3
1930- 1990 MHz, 18 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF5S19090HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S19090HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +65
- 0.5, +15
266
1.52
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +200
TC 150
TJ 200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 65 W CW
Case Temperature 78°C, 18 W CW
RθJC
0.66
0.68
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S19090HR3 MRF5S19090HSR3
1
1 Page VBIAS
R1
+
R2 C3
C4
B1
C5
R3
W1
VSUPPLY
++
++
C8 C13
C11 C12 C9 C10
C7 R4
RF
INPUT
Z1 Z2
C15
C6
Z3 Z4 Z5
C1
C14
Z6
Z7
DUT
Z9
Z8 Z10 Z11 Z12
C2
Z13
RF
OUTPUT
Z1 0.140″ x 0.080″ Microstrip
Z2 0.450″ x 0.080″ Microstrip
Z3 0.140″ x 0.080″ Microstrip
Z4 0.525″ x 0.080″ Microstrip
Z5 0.636″ x 0.141″ Microstrip
Z6 0.340″ x 0.050″ Microstrip
Z7 0.320″ x 1.401″ Microstrip
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.091″ x 1.133″ Microstrip
0.542″ x 0.071″ Microstrip
0.450″ x 1.133″ Microstrip
0.640″ x 0.141″ Microstrip
0.316″ x 0.080″ Microstrip
1.209″ x 0.080″ Microstrip
Arlon GX - 0300- 55 - 22, 0.030″, εr = 2.55
Figure 1. MRF5S19090HR3(HSR3) Test Circuit Schematic
Table 5. MRF5S19090HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
B1
Short RF Bead
95F786
C1
22 pF Chip Capacitor
100B220CP 500X
C2
10 pF Chip Capacitor
100B100CP 500X
C3, C13
1 μF, 50 V SMT Tantalum Capacitors
T494C105(1)050AS
C4, C12
0.1 μF Chip Capacitors
CDR33BX104AKWS
C5, C11
1k pF Chip Capacitors
100B102JP 500X
C6, C7
4.3 pF Chip Capacitors
100B4R3JP 500X
C8
10 μF, 35 V SMT Tantalum Capacitor
T494D106(1)035AS
C9, C10
22 μF, 35 V SMT Tantalum Capacitors
T494X226(1)035AS
C14
2.7 pF Chip Capacitor
100B2.7BP 500X
C15
0.6 – 4.5 Gigatrim Variable Capacitor
44F3358
R1
1 kW Chip Resistor
D5534M07B1K00R
R2
560 kW Chip Resistor
CR1206 564JT
R3, R4
12 W Chip Resistors
RM73B2B120JT
W1 1 turn 14 gauge wire
Manufacturer
Newark
ATC
ATC
Kemet
Kemet
ATC
ATC
Kemet
Kemet
ATC
Newark
Newark
Newark
Garrett Electronics
RF Device Data
Freescale Semiconductor
MRF5S19090HR3 MRF5S19090HSR3
3
3Pages TYPICAL CHARACTERISTICS
40
VDD = 28 Vdc, IDQ = 850 mA
35 f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N−CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth
30 PAR = 9.8 dB @ 0.01% Probability (CCDF)
25
IM3
20
15 Gps
10 ηD
ACPR
−25
IM3
−30
−35
ηD
−40
−45
−50
−55
5 −60
0
1
−65
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
109
108
107
106
100 120 140 160 180 200 220
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTBF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
100 0
1.2288 MHz
−10 Channel BW
10
−20
−IM3 in
+IM3 in
1
−30 1.2288 MHz
1.2288 MHz
Integrated BW
Integrated BW
0.1
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
0.01 Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
−40
−50
−60
0.001
0.0001
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
−70 −ACPR in 30 kHz +ACPR in 30 kHz
Integrated BW
Integrated BW
−80
0 2 4 6 8 10 −90
PEAK−TO−AVERAGE (dB)
Figure 10. 2 - Carrier CCDF N - CDMA
−100
−7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5
6 7.5
f, FREQUENCY (MHz)
Figure 11. 2 - Carrier N - CDMA Spectrum
MRF5S19090HR3 MRF5S19090HSR3
6
RF Device Data
Freescale Semiconductor
6 Page | |||
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部品番号 | 部品説明 | メーカ |
MRF5S19090HSR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | Freescale Semiconductor |