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MRF5S19090HSR3 の電気的特性と機能

MRF5S19090HSR3のメーカーはFreescale Semiconductorです、この部品の機能は「RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 MRF5S19090HSR3
部品説明 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
メーカ Freescale Semiconductor
ロゴ Freescale Semiconductor ロゴ 




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MRF5S19090HSR3 Datasheet, MRF5S19090HSR3 PDF,ピン配置, 機能
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 850 mA,
Pout = 18 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.8%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — - 51 dB in 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 90 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF5S19090H
Rev. 2, 5/2006
MRF5S19090HR3
MRF5S19090HSR3
1930- 1990 MHz, 18 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF5S19090HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S19090HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +65
- 0.5, +15
266
1.52
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +200
TC 150
TJ 200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 65 W CW
Case Temperature 78°C, 18 W CW
RθJC
0.66
0.68
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S19090HR3 MRF5S19090HSR3
1

1 Page





MRF5S19090HSR3 pdf, ピン配列
VBIAS
R1
+
R2 C3
C4
B1
C5
R3
W1
VSUPPLY
++
++
C8 C13
C11 C12 C9 C10
C7 R4
RF
INPUT
Z1 Z2
C15
C6
Z3 Z4 Z5
C1
C14
Z6
Z7
DUT
Z9
Z8 Z10 Z11 Z12
C2
Z13
RF
OUTPUT
Z1 0.140x 0.080Microstrip
Z2 0.450x 0.080Microstrip
Z3 0.140x 0.080Microstrip
Z4 0.525x 0.080Microstrip
Z5 0.636x 0.141Microstrip
Z6 0.340x 0.050Microstrip
Z7 0.320x 1.401Microstrip
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.091x 1.133Microstrip
0.542x 0.071Microstrip
0.450x 1.133Microstrip
0.640x 0.141Microstrip
0.316x 0.080Microstrip
1.209x 0.080Microstrip
Arlon GX - 0300- 55 - 22, 0.030, εr = 2.55
Figure 1. MRF5S19090HR3(HSR3) Test Circuit Schematic
Table 5. MRF5S19090HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
B1
Short RF Bead
95F786
C1
22 pF Chip Capacitor
100B220CP 500X
C2
10 pF Chip Capacitor
100B100CP 500X
C3, C13
1 μF, 50 V SMT Tantalum Capacitors
T494C105(1)050AS
C4, C12
0.1 μF Chip Capacitors
CDR33BX104AKWS
C5, C11
1k pF Chip Capacitors
100B102JP 500X
C6, C7
4.3 pF Chip Capacitors
100B4R3JP 500X
C8
10 μF, 35 V SMT Tantalum Capacitor
T494D106(1)035AS
C9, C10
22 μF, 35 V SMT Tantalum Capacitors
T494X226(1)035AS
C14
2.7 pF Chip Capacitor
100B2.7BP 500X
C15
0.6 – 4.5 Gigatrim Variable Capacitor
44F3358
R1
1 kW Chip Resistor
D5534M07B1K00R
R2
560 kW Chip Resistor
CR1206 564JT
R3, R4
12 W Chip Resistors
RM73B2B120JT
W1 1 turn 14 gauge wire
Manufacturer
Newark
ATC
ATC
Kemet
Kemet
ATC
ATC
Kemet
Kemet
ATC
Newark
Newark
Newark
Garrett Electronics
RF Device Data
Freescale Semiconductor
MRF5S19090HR3 MRF5S19090HSR3
3


3Pages


MRF5S19090HSR3 電子部品, 半導体
TYPICAL CHARACTERISTICS
40
VDD = 28 Vdc, IDQ = 850 mA
35 f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N−CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth
30 PAR = 9.8 dB @ 0.01% Probability (CCDF)
25
IM3
20
15 Gps
10 ηD
ACPR
−25
IM3
−30
−35
ηD
−40
−45
−50
−55
5 −60
0
1
−65
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
109
108
107
106
100 120 140 160 180 200 220
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTBF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
100 0
1.2288 MHz
−10 Channel BW
10
−20
−IM3 in
+IM3 in
1
−30 1.2288 MHz
1.2288 MHz
Integrated BW
Integrated BW
0.1
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
0.01 Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
−40
−50
−60
0.001
0.0001
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
−70 −ACPR in 30 kHz +ACPR in 30 kHz
Integrated BW
Integrated BW
−80
0 2 4 6 8 10 −90
PEAK−TO−AVERAGE (dB)
Figure 10. 2 - Carrier CCDF N - CDMA
−100
−7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5
6 7.5
f, FREQUENCY (MHz)
Figure 11. 2 - Carrier N - CDMA Spectrum
MRF5S19090HR3 MRF5S19090HSR3
6
RF Device Data
Freescale Semiconductor

6 Page



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部品番号部品説明メーカ
MRF5S19090HSR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Freescale Semiconductor


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