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PDF IRL5NJ024 Data sheet ( Hoja de datos )
| Número de pieza | IRL5NJ024 | |
| Descripción | LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 93955A
LOGIC LEVEL
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number
BVDSS
IRL5NJ024
55V
RDS(on)
0.06Ω
ID
17A
IRL5NJ024
55V, N-CHANNEL
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
SMD-0.5
Features:
n Logic Level Gate Drive
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
www.irf.com
17
11
68
35
0.28
±16
56
11
3.5
4.3
-55 to 150
300 (for 5 s)
2.6
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
7/13/01
1 page  
IRL5NJ024
20
15
10
5
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1 0.10
0.05
0.02
0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
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