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PDF IRG4BC10UD Data sheet ( Hoja de datos )
| Número de pieza | IRG4BC10UD | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD 91677B
IRG4BC10UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating
up to 80 kHz in hard switching, >200 kHz in
resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous Generation
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
G
E
n-channel
bridge configurations
• Industry standard TO-220AB package
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
UltraFast CoPack IGBT
VCES = 600V
VCE(on) typ. = 2.15V
@VGE = 15V, IC = 5.0A
tf (typ.) = 140ns
TO-220AB
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
8.5
5.0
34
34
4.0
16
± 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
Min.
—
—
—
—
—
Typ.
—
—
0.50
—
2 (0.07)
Max.
3.3
7.0
—
80
—
Units
°C/W
g (oz)
1
12/30/00
1 page  
500
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
400 Coes = Cce + Cgc
300 Cies
200
100
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC10UD
20
VCC = 400V
I C = 5.0A
16
12
8
4
0
0 4 8 12 16
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.30
VCC = 480V
VGE = 15V
TJ = 25 ° C
IC = 5.0A
0.25
10 RG = O10h0mΩ
VGE = 15V
VCC = 480V
1
0.1
IC = 10 A
IC = 5.50AA
IC = 2.5 A
0.20
50
60 70 80 90
RG R,GG,aGteatReeRseisstiastnacnece(O(Ωh)m)
100
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.01
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4BC10UD.PDF ] | |
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