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IRG4BC10UD PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRG4BC10UD
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRG4BC10UD Datasheet, IRG4BC10UD PDF,ピン配置, 機能
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PD 91677B
IRG4BC10UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
UltraFast: Optimized for high operating
up to 80 kHz in hard switching, >200 kHz in
resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous Generation
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
G
E
n-channel
bridge configurations
Industry standard TO-220AB package
Benefits
Generation 4 IGBT's offer highest efficiencies
available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
UltraFast CoPack IGBT
VCES = 600V
VCE(on) typ. = 2.15V
@VGE = 15V, IC = 5.0A
tf (typ.) = 140ns
TO-220AB
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
8.5
5.0
34
34
4.0
16
± 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
Min.
Typ.
0.50
2 (0.07)
Max.
3.3
7.0
80
Units
°C/W
g (oz)
1
12/30/00

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INSULATED GATE BIPOLAR TRANSISTOR

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