PDF IRG4BC10SD-S Data sheet ( Hoja de datos )

Número de pieza	IRG4BC10SD-S
Descripción	(IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes	International Rectifier
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No Preview Available ! www.DataSheet4U.com PD - 94255 IRG4BC10SD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1Vtyp. @ 2A C IRG4BC10SD-L Standard Speed CoPack IGBT • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 VCES = 600V KHz in brushless DC drives. • Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, G VCE(on) typ. = 1.10V ultra-soft-recovery anti-parallel diodes for use in bridge configurations E @VGE = 15V, IC = 2.0A • Industry standard D2Pak & TO-262 packages n-channel Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Lower losses than MOSFET's conduction and Diode losses Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Thermal Resistance D2Pak IRG4BC10SD-S TO-262 IRG4BC10SD-L Max. 600 14 8.0 18 18 4.0 18 ± 20 38 15 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V A V W °C RθJC RθJC RθCS RθJA RθJA Wt www.irf.com Parameter Min. Junction-to-Case - IGBT ––– Junction-to-Case - Diode ––– Case-to-Sink, flat, greased surface ––– Junction-to-Ambient, typical socket mount U ––– Junction-to-Ambient (PCB Mount, steady state)V ––– Weight ––– Typ. ––– ––– 0.50 ––– ––– 2.0(0.07) Max. 3.3 7.0 ––– 80 40 ––– Units °C/W g (oz) 1 06/12/01 1 page 500 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc 400 Coes = Cce + Cgc Cies 300 Coes 200 100 Cres 0 1 10 100 VCE, Collector-to-Emitter Voltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage IRG4BC10SD-S/L 20 VCC = 400V I C = 8A 15 10 5 0 0 5 10 15 20 QG, Total Gate Charge (nC) Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.60 VCC = 480V VGE = 15V 3.55 TJ IC = 25 °C = 8A 3.50 3.45 3.40 3.35 3.30 0 20 40 60 80 RGRG, G, GataeteRReessisistatannccee((OΩh) m) 100 Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 100 RG =1O0h0mΩ VGE = 15V VCC = 480V 10 1 IC = 16A IC = 8A IC = 4A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (° C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 5 Page TO-262 Package Outline IRG4BC10SD-S/L TO-262 Part Marking Information www.irf.com 11 11 Page

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