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IRG4BC10S の電気的特性と機能

IRG4BC10SのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG4BC10S
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRG4BC10S Datasheet, IRG4BC10S PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 91786A
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10S
Standard Speed IGBT
Features
• Extremely low voltage drop; 1.1V typical at 2A
• S-Speed: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives, up to 2KHz in
Chopper Applications
• Very Tight Vce(on) distribution
• Industry standard TO-220AB package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 2.0A
Benefits
• Generation 4 IGBTs offer highest efficiency
available
• IGBTs optimized for specified application conditions
• Lower conduction losses than many Power
MOSFET''s
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PDTC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220AB
Max.
600
14
8.0
18
18
± 20
110
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Units
V
A
mJ
W
°C
Typ.
–––
0.5
–––
2.0(0.07)
Max.
3.3
–––
50
–––
Units
°C/W
g (oz)
1
4/24/2000

1 Page





IRG4BC10S pdf, ピン配列
20
16
12
Square wave:
60% of rated
voltage
8
4
Ideal diodes
0
0.1
IRG4BC10S
For both:
Duty cycle: 50%
TJ = 125°C
T sink= 90°C
Gate drive as specified
Power Dissipation = 9.2 W
Triangular wave:
Clamp voltage:
80% of rated
1 10
f, Frequency (kHz)
A
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100 100
TJ = 25 °C
10 TJ = 150 °C
VGE = 15V
20µs PULSE WIDTH
1
0.8 1.2 1.6 2.0 2.4 2.8 3.2
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
10 TJ = 150 °C
TJ = 25 °C
VCC = 50V
s PPUULLSSEEWWIDIDTHTH
1
6 8 10 12
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3


3Pages


IRG4BC10S 電子部品, 半導体
IRG4BC10S
12 RG = O10h0m
T J = 150 °C
10
VCC = 480V
VGE = 15V
8
100
VGE = 20V
T J = 125 oC
6 10
4
2
SAFE OPERATING AREA
01
0 4 8 12 16
1 10 100
1000
I C, Collector Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs.
Collector Current
Fig. 12 - Turn-Off SOA
6 www.irf.com

6 Page



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