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IRG4BC10KD PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRG4BC10KD
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRG4BC10KD Datasheet, IRG4BC10KD PDF,ピン配置, 機能
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PD -91734B
IRG4BC10KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
Combines low conduction losses with high
switching speed
Tighter parameter distribution and higher efficiency
than previous generations
IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.39V
@VGE = 15V, IC = 5.0A
Benefits
Latest generation 4 IGBTs offer highest power density
motor controls possible
HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
TO-220AB
Max.
600
9.0
5.0
18
18
4.0
16
10
± 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
3.3
7.0
–––
80
–––
Units
V
A
µs
V
W
°C
Units
°C/W
g (oz)
1
4/24/2000

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