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IRG4BC10K PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRG4BC10K
部品説明 Short Circuit Rated UltraFast IGBT
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRG4BC10K Datasheet, IRG4BC10K PDF,ピン配置, 機能
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PD - 91733A
IRG4BC10K
INSULATED GATE BIPOLAR TRANSISTOR
Features
Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10µs @ 125°C, VGE = 15V
Generation 4 IGBT design provides higher efficiency
than Generation 3
Industry standard TO-220AB package
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.39V
@VGE = 15V, IC = 5.0A
Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load CurrentR
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220AB
Max.
600
9.0
5.0
18
18
10
± 20
34
38
15
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbfin (1.1Nm)
Units
V
A
µs
V
mJ
W
°C
Typ.
–––
0.5
–––
2.0 (0.07)
Max.
3.3
–––
80
–––
Units
°C/W
g (oz)
1
4/24/2000

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