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Número de pieza | LM3208 | |
Descripción | Step-Down DC-DC Converter | |
Fabricantes | National Semiconductor | |
Logotipo | ||
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April 2006
LM3208
650mA Miniature, Adjustable, Step-Down DC-DC
Converter for RF Power Amplifiers
General Description
The LM3208 is a DC-DC converter optimized for powering
RF power amplifiers (PAs) from a single Lithium-Ion cell.
However, it may be used in many other applications. It steps
down an input voltage in the range from 2.7V to 5.5V to an
adjustable output voltage of 0.8V to 3.6V. Output voltage is
set by using a VCON analog input to control power levels and
efficiency of the RF PA.
The LM3208 offers superior performance for mobile phones
and similar RF PA applications. Fixed-frequency PWM op-
eration minimizes RF interference. A shutdown function turns
the device off and reduces battery consumption to 0.01 µA
(typ.).
The LM3208 is available in an 8-pin lead-free micro SMD
package. A high switching frequency (2 MHz typ.) allows use
of tiny surface-mount components. Only three small external
surface-mount components, an inductor and two ceramic
capacitors, are required.
Features
n 2 MHz (typ.) PWM Switching Frequency
n Operates from a single Li-Ion cell (2.7V to 5.5V)
n Adjustable Output Voltage (0.8V to 3.6V)
n Fast Output Voltage Transient (0.8V to 3.4V in 25µs
typ.)
n 650mA Maximum load capability
n High Efficiency (95% typ. at 3.9VIN, 3.4VOUT at 400mA)
n 8-pin micro SMD Package
n Current Overload Protection
n Thermal Overload Protection
Applications
n Cellular Phones
n Hand-Held Radios
n RF PC Cards
n Battery Powered RF Devices
Typical Application
FIGURE 1. LM3208 Typical Application
20166301
© 2006 National Semiconductor Corporation DS201663
www.national.com
1 page Note 6: Junction-to-ambient thermal resistance (θJA) is taken from thermal measurements, performed under the conditions and guidelines set forth in the JEDEC
standard JESD51-7. A 4 layer, 4" x 4", 2/1/1/2 oz. Cu board as per JEDEC standards is used for the measurements.
Note 7: Min and Max limits are guaranteed by design, test, or statistical analysis. Typical numbers are not guaranteed, but do represent the most likely norm. Due
to the pulsed nature of the testing TA = TJ for the electrical characteristics table.
Note 8: The parameters in the electrical characteristics table are tested under open loop conditions at PVIN = VDD = 3.6V unless otherwise specified. For
performance over the input voltage range and closed-loop results, refer to the datasheet curves.
Note 9: Shutdown current includes leakage current of PFET.
Note 10: IQ specified here is when the part is not switching. For operating quiescent current at no load, refer to datasheet curves.
Note 11: Current limit is built-in, fixed, and not adjustable. Electrical Characteristic table reflects open loop data (FB = 0V and current drawn from SW pin ramped
up until cycle by cycle limit is activated). Refer to System Characteristics table for maximum output current.
Note 12: Ripple voltage should be measured at COUT electrode on a well-designed PC board and using the suggested inductor and capacitors.
Note 13: National Semiconductor recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper ESD handling
procedures can result in damage.
Note 14: Linearity limits are ±3% or ±50mV whichever is larger.
5 www.national.com
5 Page Typical Performance Characteristics (Circuit in Figure 3, PVIN = VDD = EN = 3.6V and TA = 25˚C
unless otherwise specified.). (Continued)
Output Voltage Ripple in Pulse Skip
(VIN = 3.96V, VOUT = 3.4V, RLOAD = 5Ω)
20166337
11 www.national.com
11 Page |
Páginas | Total 17 Páginas | |
PDF Descargar | [ Datasheet LM3208.PDF ] |
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