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IXTH96N20P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTH96N20P
部品説明 (IXTx96N20P) N-Channel Engancement Mode
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXTH96N20P Datasheet, IXTH96N20P PDF,ピン配置, 機能
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PolarHTTM
Power MOSFET
N-Channel Enhancement Mode
IXTH 96N20P
IXTQ 96N20P
IXTT 96N20P
VDSS
ID25
RDS(on)
= 200 V
= 96 A
= 24 m
Symbol
Test Conditions
Maximum Ratings
TO-247 (IXTH)
VDSS
VDGR
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-3P, TO-247)
TO-3P
TO-247
TO-268
200 V
200 V
±20 V G D S
96 A
75 A
225 A TO-3P (IXTQ)
60 A
50 mJ
1.5 J
10 V/ns
G
DS
(TAB)
(TAB)
600 W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
5.5 g
6.0 g
5.0 g
TO-268 (IXTT)
GS
G = Gate
S = Source
D = Drain
TAB = Drain
Features
D (TAB)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
200 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
24 m
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99117D(01/05)

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IXTH96N20P

(IXTx96N20P) N-Channel Engancement Mode

IXYS Corporation
IXYS Corporation

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