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PDF UPA2451B Data sheet ( Hoja de datos )
| Número de pieza | UPA2451B | |
| Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2451B
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µ PA2451B is a switching device, which can be driven
directly by a 2.5 V power source.
The µ PA2451B features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and
so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 20.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
RDS(on)2 = 21.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)
RDS(on)3 = 25.0 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A)
RDS(on)4 = 32.0 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A)
• Built-in G-S protection diode against ESD
PACKAGE DRAWING (Unit: mm)
16
25
34
4.4±0.1
5.0±0.1
7
(0.15)
(0.9)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA2451BTL
6PIN HWSON (4521)
(0.5)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30.0
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Note1
Drain Current (pulse) Note2
Total Power Dissipation (2 units) Note1
Total Power Dissipation (2 units) Note3
VGSS
ID(DC)
ID(pulse)
PT1
PT2
±12.0
±8.2
±65.0
2.5
0.7
Channel Temperature
Tch 150
Storage Temperature
Tstg −55 to +150
Notes 1. Mounted on ceramic board of 50 cm2 x 1.1 mm
2. PW ≤ 10 µs, Duty Cycle ≤ 1%
3. Mounted on FR-4 board of 50 cm2 x 1.1 mm
V
V
A
A
W
W
°C
°C
(2.2)
Each lead has same dimensions.
1,2: Source 1
5,6: Source 2
3: Gate 1
4: Gate 2
7: Drain
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16636EJ1V0DS00 (1st edition)
Date Published February 2004 NS CP(K)
Printed in Japan
2004
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
VGS = 2.5 V
30
3.1 V
4.0 V
4.5 V
ID = 4.0 A
Pulsed
20
10
0
-50
0
50 100
Tch - Channel Temperature - °C
150
1000
SWITCHING CHARACTERISTICS
VDD = 15.0 V
VGS = 4.0 V
RG = 6 Ω
100
td(off)
tf
tr
10
0.1
td(on)
1
ID - Drain Current - A
10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
VGS = 0 V
Pulsed
10
1
0.1
0.01
0.4
0.6 0.8
1
VF(S-D) - Source to Drain Voltage - V
1.2
µ PA2451B
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1.0 MHz
1000
Ciss
100
Coss
Crss
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT CHARACTERISTICS
4
ID = 8.2 A
VDD = 6.0 V
3 15.0 V
24.0 V
2
1
0
0 2 4 6 8 10
QG - Gate Charge - nC
Data Sheet G16636EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA2451B.PDF ] | |
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