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PDF UPA2451 Data sheet ( Hoja de datos )
| Número de pieza | UPA2451 | |
| Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2451
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA2451 is a switching device which can be driven
directly by a 2.5 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
PACKAGE DRAWING (Unit : mm)
16
25
34
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 20 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
RDS(on)2 = 21 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)
RDS(on)3 = 25 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A)
RDS(on)4 = 32 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A)
• Built-in G-S protection diode against ESD
4.4±0.1
5.0±0.1
7
(0.9)
ORDERING INFORMATION
PART NUMBER
µPA2451TL
PACKAGE
6PIN HWSON (4521)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
30
Gate to Source Voltage (VDS = 0 V) VGSS
±12
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (2unit) Note2
Total Power Dissipation (2unit) Note3
ID(DC)
ID(pulse)
PT1
PT2
±8.2
±80
2.5
0.7
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
V
V
A
A
W
W
°C
°C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. TA = 25°C Mounted on ceramic board
3. TA = 25°C Mounted on FR4 board
(0.15)
(3.05)
(0.50)
1,2: Source 1
3: Gate 1
7: Drain
5,6: Source 2
4: Gate 2
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15621EJ1V0DS00 (1st edition)
Date Published March 2002 NS CP(K)
Printed in Japan
©
2001
1 page  
µ PA2451
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000 VGS = 0 V
f = 1 MHz
1000
Ciss
100
Coss
Crss
10
0.01
0.1 1 10
VDS - Drain to Source Voltage - V
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
Pulsed
VGS = 0 V
10
1
SWITCHING CHARACTERISTICS
1000
VDD = 15 V
VGS = 10 V
RG = 0 Ω
td(off)
tf
100
10
0.1
tr
td(on)
1.0
ID - Drain Current - A
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
4
ID = 8.2 A VDD = 24 V
15 V
6V
3
2
1
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6
VF(S-D) - Source to Drain Voltage - V
0
02 4 6 8
QG - Gate Charge - nC
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
SSingle Pulse
PD (FET1):PD (FET2) =1:1
Mounted on FR4 board on
50 cm2x 1.0 mmt
178.6˚C/W
100
Mounted on Ceramic board on
50 cm2x 1.1 mmt
10 50˚C/W
10
1
0.1
0.001
0.01
0.1 1
10
PW - Pulse Width - s
Data Sheet G15621EJ1V0DS
100 1000
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA2451.PDF ] | |
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