PDF UPA2450 Data sheet ( Hoja de datos )

Número de pieza	UPA2450
Descripción	N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Fabricantes	NEC
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No Preview Available ! www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA2450 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA2450 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V drive avaliable • Low on-state resistance RDS(on)1 = 17.5 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)2 = 18.5 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) RDS(on)3 = 22.0 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A) RDS(on)4 = 27.5 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A) • Built-in G-S protection diode against ESD ORDERING INFORMATION PART NUMBER PACKAGE µ PA2450TL 6PIN HWSON (4521) PACKAGE DRAWING (Unit: mm) 16 25 34 4.4±0.1 5.0±0.1 7 (0.9) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) VDSS VGSS 20 ±12 Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (2 unit) Note2 Total Power Dissipation (2 unit) Note3 ID(DC) ID(pulse) PT1 PT2 ±8.6 ±80 2.5 0.7 Channel Temperature Tch 150 Storage Temperature Tstg –55 to +150 V V A A W W °C °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. TA = 25°C Mounted on ceramic board. 3. TA = 25°C Mounted on FR4 board. (0.15) (3.05) 1,2: Source 1 3: Gate 1 7: Drain 5,6: Source 2 4: Gate 2 (0.50) EQUIVALENT CIRCUIT Drain1 Drain2 Gate1 Body Diode Gate2 Body Diode Gate Protection Diode Source1 Gate Protection Diode Source2 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15612EJ1V0DS00 (1st edition) Date Published March 2002 NS CP(K) Printed in Japan © 2001 1 page µ PA2450 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 VGS = 0 V f = 1 MHz 1000 100 Ciss Coss Crss 10 0.01 0.1 1 10 VDS - Drain to Source Voltage - V 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 VGS = 0 V 10 85˚C 25˚C 1 −40˚C 0.1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VF(S-D) - Source to Drain Voltage - V SWITCHING CHARACTERISTICS 1000 VDD = 10 V VGS = 4.0 V RG = 6 Ω td(off) tf 100 tr td(on) 10 0.1 1.0 ID - Drain Current - A 10 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 4 ID = 8.6 A VDD = 16 V 3 10 V 4V 2 1 0 0 2 4 6 8 10 QG - Gate Charge - nC 1000 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH SSingle Pulse PD (FET1):PD (FET2) =1:1 Mounted on FR4 board on 50 cm2x 1.0 mmt 178.6˚C/W 100 Mounted on Ceramic board on 50 cm2x 1.1 mmt 10 50˚C/W 1 0.1 0.001 0.01 0.1 1 10 PW - Pulse Width - s Data Sheet G15612EJ1V0DS 100 1000 5 5 Page

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