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IRHF593230 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHF593230
部品説明 RADIATION HARDENED POWER MOSFET THRU-HOLE
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRHF593230 Datasheet, IRHF593230 PDF,ピン配置, 機能
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PD - 94450
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level RDS(on)
IRHF597230 100K Rads (Si) 0.54
IRHF593230 300K Rads (Si) 0.54
ID
-4.5A
-4.5A
IRHF597230
200V, P-CHANNEL
4# TECHNOLOGY
c
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
T0-39
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-4.5
-3.0 A
-18
25 W
0.2 W/°C
±20 V
157 mJ
-4.5 A
2.5 mJ
-25
-55 to 150
V/ns
oC
300 (0.063in/1.6mm from case for 10s )
0.98 ( Typical )
g
For footnotes refer to the last page
www.irf.com
1
06/18/02

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IRHF593230

RADIATION HARDENED POWER MOSFET THRU-HOLE

International Rectifier
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