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GB20NB32LZ-1 の電気的特性と機能

GB20NB32LZ-1のメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL PowerMESH TM IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 GB20NB32LZ-1
部品説明 N-CHANNEL PowerMESH TM IGBT
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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GB20NB32LZ-1 Datasheet, GB20NB32LZ-1 PDF,ピン配置, 機能
www.DataSheet4U.com
STGB20NB32LZ
STGB20NB32LZ-1
N-CHANNEL CLAMPED 20A - D2PAK/I2PAK
INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE
VCES
VCE(sat)
IC
STGB20NB32LZ CLAMPED < 2.0 V
STGB20NB32LZ-1 CLAMPED < 2.0 V
20 A
20 A
s POLYSILICON GATE VOLTAGE DRIVEN
s LOW THRESHOLD VOLTAGE
s LOW ON-VOLTAGE DROP
s HIGH CURRENT CAPABILITY
s HIGH VOLTAGE CLAMPING FEATURE
3
1
D2PAK
123
I2PAK
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESHIGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s ELECTRONIC IGNITION FOR AUTOMOTIVE
ORDERING INFORMATION
SALES TYPE
STGB20NB32LZT4
STGB20NB32LZ-1
MARKING
GB20NB32LZ
GB20NB32LZ
PACKAGE
D2PAK
I2PAK
PACKAGING
TAPE & REEL
TUBE
December 2003
1/11

1 Page





GB20NB32LZ-1 pdf, ピン配列
STGB20NB32LZ - STGB20NB32LZ-1
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max.
gfs Forward Transconductance VCE = 25 V , IC =20 A
35
Cies Input Capacitance
VCE = 25 V, f = 1 MHz, VGE = 0
2300
Coes
Output Capacitance
165
Cres
Reverse Transfer
Capacitance
28
Qg Gate Charge
VCE = 280 V, IC = 20 A,
VGE = 5 V
51
Unit
S
pF
pF
pF
nC
FUNCTIONAL CHARACTERISTICS
Symbol
II
Parameter
Latching Current
U.I.S.
Functional Test Open
Secondary Coil
Test Conditions
RGOFF =127Ω, VClamp = 250 V,
VGE = 5 V, TC = 125 °C
RGOFF =1K,Tc=125°C, VG = 5 V,
L = 1.6mH
Min.
34
21.6
Typ.
Max. Unit
A
A
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
(di/dt)on
Delay Time
Rise Time
Turn-on Current Slope
VCC = 250 V, IC = 20 A
RG = 1K, VGE = 4.5 V
VCC= 250 V, IC = 20 A
RG=1K, VGE = 4.5 V
Eon Turn-on Switching Losses VCC= 250 V, IC = 20 A, Tc=25°C
RG=1K, VGE = 4.5 V, Tc=150°C
SWITCHING OFF
Symbol
Parameter
Test Conditions
tc
tr(Voff)
Cross-Over Time
Off Voltage Rise Time
Vcc = 250 V, IC = 20 A,
RGE = 1 K, VGE = 4.5 V
tf Fall Time
td(off)
Off Voltage Delay Time
Eoff(**) Turn-off Switching Loss
tc Cross-Over Time
tr(Voff) Off Voltage Rise Time
tf Fall Time
td(off)
Off Voltage Delay Time
Eoff(**) Turn-off Switching Loss
(**)Losses Include Also the Tail (jedec Standardization)
Vcc = 250 V, IC = 20 A,
RGE = 1 K, VGE = 4.5 V
Tc = 150 °C
Min.
Min.
Typ.
2.3
0.6
550
Max.
Unit
µs
µs
A/µs
8.8 mJ
9.2 mJ
Typ.
4.8
2.6
2
11.5
11.8
7.8
3.5
3.9
12
17.8
Max.
Unit
µs
µs
µs
µs
mJ
µs
µs
µs
µs
mJ
3/11


3Pages


GB20NB32LZ-1 電子部品, 半導体
STGB20NB32LZ - STGB20NB32LZ-1
BVEC Reverse Battery Voltage
Thermal Impedance
Switching Off Safe Operating Area
6/11

6 Page



ページ 合計 : 11 ページ
 
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[ GB20NB32LZ-1 データシート.PDF ]


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共有リンク

Link :


部品番号部品説明メーカ
GB20NB32LZ-1

N-CHANNEL PowerMESH TM IGBT

ST Microelectronics
ST Microelectronics


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