DataSheet.jp

UMF23N の電気的特性と機能

UMF23NのメーカーはROHM Semiconductorです、この部品の機能は「Power management」です。


製品の詳細 ( Datasheet PDF )

部品番号 UMF23N
部品説明 Power management
メーカ ROHM Semiconductor
ロゴ ROHM Semiconductor ロゴ 




このページの下部にプレビューとUMF23Nダウンロード(pdfファイル)リンクがあります。

Total 5 pages

No Preview Available !

UMF23N Datasheet, UMF23N PDF,ピン配置, 機能
www.DataSheet4U.com
Transistors
EMF23/UMF23N
Power management (dual transistors)
EMF23/UMF23N
2SA1774and DTC114E are housed independently in a EMT6 or UMT6 package.
zApplication
Power management circuit
zFeatures
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
zStructure
Silicon epitaxial planar transistor
zExternal dimensions (Units : mm)
EMF23
(4)
(5)
(6)
1.2
1.6
(3)
(2)
(1)
ROHM : EMT6
Each lead has same dimensions
Abbreviated symbol : F23
UMF23N
zEquivalent circuits
(3) (2) (1)
DTr2
R1
R2
(4) (5)
R1=10k
R2=10k
Tr1
(6)
1.25
2.1
0.1Min.
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
Abbreviated symbol :F23
zPackage, marking, and packaging specifications
Type
EMF23
EMT6
F23
T2R
8000
UMF23N
UMT6
F23
TR
3000
1/4

1 Page





UMF23N pdf, ピン配列
Transistors
zElectrical characteristic curves
Tr1
-50
Ta = 100°C
-20 25°C
40°C
-10
-5
VCE = 6V
-2
-1
-0.5
-0.2
-0.1
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
EMF23/UMF23N
-10
Ta = 25°C
-35.0
-31.5
-8 -28.0
-24.5
-6 -21.0
-17.5
-4 -14.0
-10.5
-2 -7.0
-3.5µA
IB = 0
0 -0.4 -0.8 -1.2 -1.6 -2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( Ι )
-100
Ta = 25°C
-500
-80 -450
-400
-350
-300
-60
-250
-200
-40 -150
-100
-20
-50µA
IB = 0
0 -1 -2 -3 -4 -5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
500
Ta = 25°C
200
VCE = -5V
-3V
-1V
100
50
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector
current ( Ι )
500
Ta = 100°C
25°C
200 -40°C
-1
-0.5
Ta = 25°C
100
50
-0.2 -0.5 -1 -2
VCE = -6V
-5 -10 -20 -50 -100
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs. collector
current ( ΙΙ )
-0.2
-0.1
-0.05
IC/IB = 50
20
10
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current ( Ι )
-1
lC/lB = 10
-0.5
-0.2
-0.1
-0.05
Ta = 100°C
25°C
-40°C
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( ΙΙ )
1000
500
200
Ta = 25°C
VCE = -12V
20
Cib
10
Ta = 25°C
f = 1MHz
IE = 0A
IC = 0A
Cob
5
100
50
0.5 1 2
5 10 20
50 100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
2
-0.5 -1 -2
-5 -10 -20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
3/4


3Pages





ページ 合計 : 5 ページ
 
PDF
ダウンロード
[ UMF23N データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
UMF23N

Power management

ROHM Semiconductor
ROHM Semiconductor
UMF23NDW1T1G

Power Management

Leshan Radio Company
Leshan Radio Company
UMF23NDW1T3G

Power Management

Leshan Radio Company
Leshan Radio Company


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap