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PDF IXFC96N15P Data sheet ( Hoja de datos )
| Número de pieza | IXFC96N15P | |
| Descripción | PolarHT HiPerFET Power MOSFET ISOPLUS220 | |
| Fabricantes | IXYS Corporation | |
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PolarHTTM HiPerFET
Power MOSFET
ISOPLUS220TM
(Electrically Isolated Back Surface)
IXFC 96N15P
N-Channel Enhancement Mode
Fast Recovery Diode, Avalanche Rated
VDSS =
ID25 =
=RDS(on)
trr <
150 V
42 A
26 mΩ
200 ns
Symbol
Test Conditions
Maximum Ratings
ISOPLUS 220TM
E153432
VDSS
VDGR
VGS
VGSM
I
D25
IDM
IAR
EAR
EAS
dv/dt
PD
T
J
TJM
Tstg
TL
FC
VISOL
Weight
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Continuous
Transient
T
C
= 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
T
J
≤
175°C,
R
G
=
4
Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting force
50/60 Hz, 1 minute
150 V
150 V
±20 V
±30 V
42 A
250 A
60 A
40 mJ
1.0 J
10 V/ns
120
-55 ... +175
175
-55 ... +150
300
11...65/2.4...11
2500
3
W
°C
°C
°C
°C
N/lb
~V
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
Characteristic Values
Min. Typ. Max.
150 V
VGS(th)
VDS = VGS, ID = 4 mA
3.0 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150 °C
25 μA
300 μA
R
DS(on)
V = 10 V, I = 48 A, Note 1
GS D
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
26 mΩ
G
DS
Isolated back surface*
G = Gate
S = Source
D = Drain
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z Low drain to tab capacitance(<35pF)
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
z Fast intrinsic Rectifier
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
Advantages
z Easy assembly: no screws, or isolation
foils required
z Space savings
z High power density
z Low collector capacitance to ground
(low EMI)
© 2006 IXYS All rights reserved
DS99240E(03/06)
1 page  
10.00
1.00
0.10
0.01
0.1
Fig. 13. Maxim um Transient Therm al Resistance
IXFC 96N15P
1 10 100
Pulse Width - milliseconds
1000
© 2006 IXYS All rights reserved
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| PDF Descargar | [ Datasheet IXFC96N15P.PDF ] | |
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