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PDF IXFC60N20 Data sheet ( Hoja de datos )
| Número de pieza | IXFC60N20 | |
| Descripción | HiPerFET MOSFET ISOPLUS220TM | |
| Fabricantes | IXYS Corporation | |
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ADVANCE TECHNICAL INFORMATION
HiPerFETTM MOSFET
ISOPLUS220TM
IXFC 60N20
Electrically Isolated Back Surface
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
V = 200 V
DSS
I = 60 A
D25
R=
DS(on)
33 mΩ
t
rr
≤ 250 ns
Symbol
VDSS
V
DGR
VGS
VGSM
ID25
IDM
I
AR
EAR
E
AS
dv/dt
PD
TJ
TJM
Tstg
T
L
Weight
Symbol
VDSS
V
GS(th)
I
GSS
IDSS
R
DS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
200 V
200 V
±20 V
±30 V
60 A
240 A
60 A
30 mJ
1.0 J
5 V/ns
230
-55 ... +150
150
-55 ... +150
300
3
W
°C
°C
°C
°C
g
Test Conditions
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = IT
Notes 1, 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
200
2
TJ = 25°C
TJ = 125°C
V
4V
±100 nA
25 µA
1 mA
33 mΩ
ISOPLUS 220TM
G
D
S
Isolated back surface*
G = Gate,
S = Source
D = Drain,
* Patent pending
Features
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
-Isolatedmountingsurface
-2500Velectricalisolation
l Lowdraintotabcapacitance(<35pF)
l Low RDS (on)
l Ruggedpolysilicongatecellstructure
l UnclampedInductiveSwitching(UIS)
rated
l FastintrinsicRectifier
Applications
l DC-DC converters
l Batterychargers
l Switched-modeandresonant-mode
power supplies
l DC choppers
l AC motor control
Advantages
l Easy assembly: no screws or isolation
foilsrequired
l Space savings
l High power density
l Lowcollectorcapacitancetoground
(low EMI)
© 2001 IXYS All rights reserved
98843 (6/01)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFC60N20.PDF ] | |
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