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Número de pieza | IXFC52N30P | |
Descripción | PolarHTTM HiPerFET Power MOSFET | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
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Advance Technical Information
PolarHTTM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
IXFC52N30P
V
DSS
ID25
RDS(on)
= 300 V
= 32 A
= 75 mΩ
Symbol
VDSS
V
DGR
V
GSS
VGSM
ID25
I
DM
IAR
EAR
EAS
dv/dt
PD
TJ
T
JM
Tstg
TL
VISOL
FC
Test Conditions
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
TC = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, t = 1minute, leads-to-tab
Mounting Force
Maximum Ratings
300 V
300 V
±20 V
±30 V
32 A
150 A
52 A
30 mJ
1.0 J
ISOPLUS220TM(IXFC)
E153432
G
DS
G = Gate
S = Source
D = Drain
TAB = Drain
10 V/ns
100
-55 ... +150
150
-55 ... +150
300
2500
11..65/2.5..15
W
°C
°C Features
°C z Silicon chip on Direct-Copper-Bond
substrate
°C - High power dissipation
V~ - Isolated mounting surface
- 2500V electrical isolation
N/lb z Low drain to tab capacitance(<30pF)
Weight
ISOPLUS220
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
V
DSS
V
GS
=
0
V,
I
D
=
250
µA
2.0 g
Characteristic Values
Min. Typ. Max.
300 V
VGS(th)
VDS = VGS, ID = 4 mA
2.5 5.0 V
I
GSS
V
GS
=
±20
V,
DC
V
DS
=
0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
65 75 m Ω
Advantages
z Easy to mount
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS99115A(04/05)
1 page Fig. 6. Drain Current vs. Case
Tem perature
27
24
21
18
15
12
9
6
3
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
IXFC 52N30P
Fig. 12. Forw ard-Bias Safe
Operating Area
1000
RDS(on) Limit
100
TC = 25ºC
TJ =15 0ºC
25µs
1ms
10 10ms
100ms
DC
1
10 100
VD S - Volts
1000
10.00
Fig. 13. Maxim um Transient Therm al Resistance
1.00
0.10
0.01
0.1
1 10 100
Pulse Width - milliseconds
1000
© 2003 IXYS All rights reserved
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IXFC52N30P.PDF ] |
Número de pieza | Descripción | Fabricantes |
IXFC52N30P | PolarHTTM HiPerFET Power MOSFET | IXYS Corporation |
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