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IRFS4227PBF の電気的特性と機能

IRFS4227PBFのメーカーはInternational Rectifierです、この部品の機能は「PDP SWITCH」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFS4227PBF
部品説明 PDP SWITCH
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFS4227PBF Datasheet, IRFS4227PBF PDF,ピン配置, 機能
www.DataSheet4U.com
PDP SWITCH
PD - 97037
IRFS4227PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
VDS max
200
VDS (Avalanche) typ.
240
RDS(ON) typ. @ 10V
22
IRP max @ TC= 100°C
TJ max
130
175
DD
V
V
m:
A
°C
G
S
S
GD
D2Pak
GDS
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Repetitive Peak Current g
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case f
Junction-to-Ambient (PCB Mounted) fh
Max.
±30
62
44
260
130
330
190
2.2
-40 to + 175
300
10lbxin (1.1Nxm)
Typ.
–––
–––
Max.
0.45*
40
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes  through † are on page 8
www.irf.com
Units
V
A
W
W/°C
°C
N
Units
1
9/27/05

1 Page





IRFS4227PBF pdf, ピン配列
VGS
TOP
15V
10V
8.0V
100 BOTTOM 7.0V
7.0V
10
60µs PULSE WIDTH
Tj = 25°C
0.1 1 10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000.0
100.0
VDS = 25V
60µs PULSE WIDTH
TJ = 175°C
10.0
1.0 TJ = 25°C
0.1
3.0
4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
1000
900
800
700
L = 220nH
C = 0.4µF
100°C
25°C
600
500
400
300
200
100
110 120 130 140 150 160 170
VDS, Drain-to -Source Voltage (V)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
www.irf.com
IRFS4227PbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
7.0V
10
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1
VDS, Drain-to-Source Voltage (V)
10
Fig 2. Typical Output Characteristics
4.0
ID = 46A
VGS = 10V
3.0
2.0
1.0
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
1000
800
L = 220nH
C = Variable
100°C
25°C
600
400
200
0
130 140 150 160 170 180 190
ID, Peak Drain Current (A)
Fig 6. Typical EPULSE vs. Drain Current
3


3Pages


IRFS4227PBF 電子部品, 半導体
IRFS4227PbF
+
‚
-

RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
di/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductoorr CCuurrernetnt
Forward Drop
Ripple 5%
*VGS=10V
VDD
ISD
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 19a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 19b. Unclamped Inductive Waveforms
L
VCC
DUT
0
1K
Fig 20a. Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 20b. Gate Charge Waveform
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRFS4227PBF

PDP SWITCH

International Rectifier
International Rectifier


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