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PDF STD5NE10L Data sheet ( 特性 )

部品番号 STD5NE10L
部品説明 N - CHANNEL STripFET POWER MOSFET
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 

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STD5NE10L Datasheet, STD5NE10L PDF,ピン配置, 機能
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®
TYPE
STD5NE10L
STD5NE10L
N - CHANNEL 100V - 0.3 - 5A - DPAK/IPAK
STripFETPOWER MOSFET
V DSS
100 V
RDS(on)
< 0.4
ID
5A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.3
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100 % AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR TAPE & REEL AND OTHER
PACKAGING OPTIONS CONTACT SALES
OFFICES
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ” Single Feature
Size” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalanche charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
IPAK
TO-251
(Suffix ”-1”)
3
2
1
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES,etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS
VDGR
VG S
ID
ID
IDM()
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction T emperature
() Pulse width limited by safe operating area
October 1998
Value
Unit
100 V
100 V
± 20
V
5A
3.5 A
20 A
25 W
0.2 W/oC
6
-65 to 150
150
( 1) ISD 5 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
1/5

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