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PDF STD5NE10L Data sheet ( 特性 )
| 部品番号 | STD5NE10L |
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| 部品説明 | N - CHANNEL STripFET POWER MOSFET | ||
| メーカ | ST Microelectronics | ||
| ロゴ |  |
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このページの下部にプレビューとSTD5NE10Lダウンロード（pdfファイル）リンクがあります。 Total 6 pages
www.DataSheet4U.com
®
TYPE
STD5NE10L
STD5NE10L
N - CHANNEL 100V - 0.3 Ω - 5A - DPAK/IPAK
STripFET™ POWER MOSFET
V DSS
100 V
RDS(on)
< 0.4 Ω
ID
5A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.3 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100 % AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR TAPE & REEL AND OTHER
PACKAGING OPTIONS CONTACT SALES
OFFICES
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ” Single Feature
Size™ ” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalanche charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
IPAK
TO-251
(Suffix ”-1”)
3
2
1
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES,etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS
VDGR
VG S
ID
ID
IDM(•)
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction T emperature
(•) Pulse width limited by safe operating area
October 1998
Value
Unit
100 V
100 V
± 20
V
5A
3.5 A
20 A
25 W
0.2 W/oC
6
-65 to 150
150
( 1) ISD ≤ 5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
oC
oC
1/5
1 Page  | |||
| ページ | 合計 : 6 ページ | ||
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PDF ダウンロード | [ STD5NE10L.PDF ] | |
共有リンク
Link :おすすめデータシート
| 部品番号 | 部品説明 | メーカ |
| STD5NE10 | N - CHANNEL POWER MOSFET | ST Microelectronics |
| STD5NE10L | N - CHANNEL STripFET POWER MOSFET | ST Microelectronics |